Semiconductor memory device and memory system

ABSTRACT

Two memory cells in different memory arrays are simultaneously selected in accordance with the designation of a specific write operation mode to associate a logic 1 of a write signal with a state in which an electric charge exists in each capacitor. Further, a logic 0 of the write signal is associated with a state in which no electric charge exists in the capacitor to write the same write signal. Two dynamic memory cells in different memory arrays are simultaneously selected in accordance with the designation of a specific read operation mode to associate a state in which an electric charge exists in a capacitor of each dynamic memory cell with a logic 1 of a read signal and associate a state in which no electric charge exists in the capacitor with a logic 0 of the read signal in response to a write operation. Thus, the logics 1 of the two read signals are preferentially output.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of application Ser. No. 08/638,128,filed Apr. 26, 1996, now U.S. Pat. No. 5,818,784, the entire disclosureof which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor memory device and amemory system, and principally to a high storage capacity type dynamicRAM (Random Access Memory) and a technique effective for use in a dataholding technique employed in a memory system using the dynamic RAM.

There has been known a dynamic RAM wherein an oscillator, having anoscillating period or cycle which varies depending on the temperature,is provided to vary a refresh period or cycle according to a change intemperature, thereby reducing a data holding current that flows duringself-refresh. This type of dynamic RAM has been disclosed in JapanesePatent Application Laid-Open No. 5-6663. There has been also known adynamic RAM of a type wherein a plate voltage applied to each of dynamicmemory cells is lowered during self-refresh to reduce a leakage currentthat flows through the dynamic memory cell. This type of dynamic RAM hasbeen disclosed in the 1995 IEEE international Solid-State CircuitConference, ISSCC 95/SESSION 14/DRAM/PAPER FA14, 1, "A Sub-0.5μ A/MBDATA-Retention DRAM".

In the former dynamic RAM, the oscillator, whose oscillating cyclevaries depending on the temperature, automatically sets the optimumrefresh cycle with respect to a change in data holding time due to avariation in ambient temperature of the dynamic RAM in order to minimizethe data holding current in the self-refresh mode.

Now, the decision of the data holding time of each dynamic memory cellis made to cope with a leakage current developed in a PN junctiondependent on structures of a MOSFET and a capacitor both of whichconstitute each memory or at an interface between a silicon substrateand an oxide film. It has been known that ones of the memory cells inthe dynamic RAM, having data-holding times that relatively greatlydepend on temperatures and a source voltage, command about 0.1% of thenumber of the entire memory cells. Further, memory cells (hereinaftercalled "worst memory cells") of a small number of these memory cells,which are shortest in data holding time, will determine the whole dataholding time of the dynamic RAM.

SUMMARY OF THE INVENTION

The oscillator,whose cycle varies depending on the temperature,comprises pseudo memory cells composed of about 1000 actual memory cellsconnected in parallel, a precharge circuit and a comparison circuit fordetecting a potential applied to each pseudo memory cell. The oscillatordetects an effect of temperatures exerted on the actual memory cells ona simulation basis by detecting, as a drop in the potential of eachpseudo memory cell, a decrease in electric charge stored in the pseudomemory cell based on a precharge signal. Therefore, the inventors, etal. of the present application have discovered a problem that since theoscillating period of the oscillator principally follows data holdingtimes of the great majority of memory cells other than the small numberof memory cells in the dynamic RAM, the corresponding memory cells aredifferent from the worst memory cells that greatly depend on thetemperature and the power source, whereby the optimum refresh cyclecannot be obtained.

The latter dynamic RAM is intended to lower a plate potential applied toeach memory cell, which is normally Vcc/2, to Vss (reference potential)upon designation of the self-refresh mode and reduce a potential at a PNjunction between capacitor portions of the memory cells. Since, however,a storage node of each memory cell can be lowered to a negativepotential by coupling by reducing the plate potential of each memorycell to Vss, it is necessary to reduce the potential at a word line soas to correspond to the negative potential to prevent an addressselection MOSFET whose gate is connected to the word line from beingturned on. Further, the adverse effect of increasing the time requiredto return the self-refresh mode to a normal access mode is produced.

An object of the present invention is to provide a semiconductor memorydevice and a memory system wherein a data holding function with a highdegree of reliability can be provided owing to a simple structure.Another object of the present invention is to provide a semiconductormemory device and a memory system both capable of greatly reducing powerconsumption in a data holding mode (self-refresh mode). The above andother objects, and novel features of the present invention will becomeapparent from the description of the present specification and theaccompanying drawings.

A summary of featured aspects of the invention disclosed in the presentapplication will now be briefly described. Two memory cells in differentmemory arrays or dynamic RAMs are simultaneously selected in accordancewith the designation of a specific write operation mode so that a logic1 of a write signal is associated with a state in which an electriccharge exists in the corresponding capacitor and a logic 0 of the writesignal is associated with a state in which no electric charge exists inthe capacitor, whereby the same write signal is written. Two dynamicmemory cells in the different memory arrays are simultaneously selectedin accordance with the designation of a specific read operation mode sothat in correspondence with the write operation, a state in which anelectric charge exists in a capacitor of each of the two dynamic memorycells,referred to above, is associated with a logic 1 of a read signaland a state in which no electric charge exists in the capacitor, isassociated with a logic 0 of the read signal. Further, a logic 1 levelassociated with two read signals are preferentially outputted. That is,a logic 1 level is outputted for the read signal under a condition inwhich either or both of the selected memory cells have an electriccharge stored therein indicative of a logic 1 write signal.

According to the aforementioned means, since the data can be read fromthe other of the two memory cells even if the information stored in oneof the two memory cells is destroyed due to the leakage current, byassociating the state in which the electric charge exists in each of thecapacitors of the two memory cells with the logic 1 in the data holdingstate or the like and preferentially outputting it, the data can be heldwith high reliability and the refresh cycle can be made long accordingto the average memory cell, thus making it possible to greatly reducepower consumption.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be described with reference to theaccompanying drawings in which:

FIG. 1 is a block diagram showing examples of memory arrays and theirperipheral selection circuits employed in a dynamic RAM to which thepresent invention is applied;

FIG. 2 is a block diagram illustrating examples of input/outputinterfaces and a timing control circuit employed in the dynamic RAMshown in FIG. 1;

FIG. 3 is a fragmentary circuit diagram showing a memory array portionof the dynamic RAM shown in FIG. 1;

FIG. 4 is a schematic circuit diagram depicting one example of a readcircuit of the dynamic RAM shown in FIG. 1;

FIG. 5(A) is a schematic circuit diagram showing another example of theread circuit of the dynamic RAM shown in FIG. 1;

FIG. 5(B) is a schematic circuit diagram illustrating a further exampleof the read circuit of the dynamic RAM shown in FIG. 1;

FIG. 6 is a circuit diagram showing one example of an exclusive NORcircuit employed in a data conversion circuit shown in FIG. 5;

FIG. 7 is a circuit diagram illustrating another example of the dataconversion circuit shown in FIG. 5;

FIG. 8 is a layout diagram of memory arrays employed in one embodimentof the dynamic RAM to which the present invention is applied;

FIGS. 9(A) and 9(B) are respectively schematic timing charts fordescribing refresh operations of the dynamic RAM according to thepresent invention;

FIG. 10 is a schematic block diagram showing one example of atemperature-dependent timer;

FIG. 11 is a timing chart for describing the operation of thetemperature-dependent timer shown in FIG. 10;

FIGS. 12(A) and 12(B) are respectively schematic timing charts fordescribing the operation of the dynamic RAM according to the presentinvention;

FIGS. 13(A), 13(B) and 13(C) are respectively configurational viewsschematically showing the operations of the dynamic RAM according to thepresent invention;

FIG. 14 is a circuit diagram showing examples of X decoders and worddrivers employed in the dynamic RAM according to the present invention;

FIGS. 15(A) and 15(B) are respectively timing charts for explainingschematic functions of the data conversion circuit DSCR provided in thedynamic RAM according to the present invention;

FIGS. 16(A) and 16(B) are respectively timing charts for describingschematic functions of the data conversion circuit DSCR at the time thatredundant word lines employed in the dynamic RAM according to thepresent invention have been selected;

FIGS. 17(A) and 17(B) are respectively schematic block diagrams showingmodifications of the dynamic RAM according to the present invention;

FIG. 18 is a configurational view illustrating one embodiment of amemory module according to the present invention;

FIG. 19 is a configurational view showing another embodiment of thememory module according to the present invention;

FIG. 20 is a characteristic diagram for describing the relationshipbetween a stand time and the rate of disappearance of data both employedin a standard conventional dynamic RAM;

FIGS. 21(A) and 21(B,) are respectively characteristic diagrams ofrefresh operations dependent on temperatures, which have experimentallybeen obtained in the dynamic RAM shown in FIG. 20;

FIG. 22 is a general view of the operation of a dynamic RAM equippedwith a dual memory cell mode, according to the present invention, whichhas been applied to a portable device;

FIG. 23 is a correspondence diagram showing the layout of external andinternal addresses;

FIG. 24 is a correspondence diagram illustrating the layout of externaland internal addresses; and

FIG. 25 is a diagram showing the relationship among the arrays ARRAY,memory arrays MARY shown in FIG. 1 and their corresponding addresses,main amplifiers and write drivers.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIGS. 1 and 2 are respectively block diagrams showing one embodiment ofa dynamic RAM to which the present invention is applied. FIG. 1illustrates memory arrays and their peripheral selection circuits. FIG.2 shows input/output interfaces like address buffers or input/outputbuffers and a timing control circuit.

referring to FIG. 1, a Y decoder YDEC01 is provided so as to beinterposed between both a memory mat MMAT0 and a sense amplifier SA0connected thereto and both a memory mat MMAT1 and a sense amplifier SA1connected thereto. Although not shown in the drawing, the senseamplifiers SA0 and SA1 are respectively provided with Y (column)selection switches. The sense amplifier SA0 and complementary bit lines(which may be called "complementary data lines or complementary digitlines") thereof and the sense amplifier SA1 and complementary bit linesthereof are respectively electrically connected to input/output linesIO0i and IO1i in response to a signal output from the Y decoder YDEC01.

Other memory mats MMAT2 and MMAT3, MMAT4 and MMAT5 and MMAT6 and MMAT7are respectively provided with sense amplifiers SA2 and SA3, SA4 and SA5and SA6 and SA7. A Y decoder YDEC23 is interposed between the senseamplifiers SA2 and SA3 and is shared between the two memory mats MMAT2and MMAT3. Further, a Y decoder YDEC45 is interposed between the senseamplifiers SA4 and SA5 and is used commonly to the two memory mats MMAT4and MMAT5. Furthermore, a Y decoder DEC57 is interposed between thesense amplifiers SA6 and SA7 and is shared between the two memory matsMMAT6 and MMAT7.

Either one of the input/output lines IO0i and I01i is electricallyconnected to both an input terminal of a main amplifier MA composed offour circuits and an output terminal of a write driver WD composed offour circuits through an input/output line selection circuit IOSEL01 inaccordance with a control signal outputted from a mat control circuitMATCNTL01,which will be described later.

The memory mats MMAT0 through MMAT7 are provided with theircorresponding decoders XD0 and XD1. These decoders XD0 and XD1 decode asignal AXi outputted from a predecoder circuit XPD,to be describedlater,to create signals for selecting four word lines. Word drivers WD0and WD1 are respectively provided which form word line select signalsbased on signals outputted from the decoders XD0 and XD1 and mat controlcircuits MATCNTL01 through MATCNTL67,which will next be described. Worddrivers associated with spare word lines for the relief of defects arealso included in the word drivers.

The mat control circuit MATCNTL01 is provided so as to correspond to thepair of memory mats MMAT0 and MMAT1. The mat control circuits MATCNTL23,MATCNTL45 and MATCNTL67,similar to the above,are respectively providedso as to correspond to the pairs of memory mats MMAT2 and MMAT3, MMAT4and MMAT5 and MMAT6 and MMAT7. The mat control circuits MATCNTL01through MATCNTL67 respectively receive mat select signals MS0 throughMS7, an address signal /AX11 of the most significant bit and a senseoperation timing signal φSA, address signals X0 through X3 eachrepresented by the two rightmost bits, and redundant signals XR0 throughXR3. One mat control circuit corresponding to the selected memory matoutputs a signal for selecting one of the four word lines. Otherwise,each of the mat control circuits MATCNTL01 through MATCNTL67 outputs asignal for bringing a bit line precharge switch into an off state incorrespondence to the selected memory mat and a timing signal forstarting the operation for amplification of each sense amplifier.

When an access to a defective word line is performed, the operation forselecting the defective word line is stopped. Since a select signal onthe redundant circuit side is formed by one of the select signals XR0through XR3 as an alternative to this operation, the corresponding spareword line is brought into a selected state. Although the internalconfigurations of other arrays ARRAY1 through ARRAY3 are omitted fromthe same drawing, the arrays ARRAY1 through ARRAY3 are composed ofmemory arrays and their peripheral circuits similar to those thatconstitute the array ARRAY0.

Referring to FIG. 2, the timing control circuit TG is responsive to achip enable signal /CE, an output enable signal /OE and a write enablesignal /WE respectively supplied from external terminals to createvarious timing signals necessary to make a decision as to an operationmode and operate internal circuits correspondingly. In the presentembodiment, an interface of the dynamic RAM serves so as to havecompatibility with a static RAM regardless of the dynamic RAM asdescribed above. Namely, a system for supplying row- and column-systemaddress signals from separate address terminals is adopted withoutadopting an address multiplex system wherein the row- and column-systemaddress signals are sequentially inputted from a common address terminalin synchronism with an address strobe signal as in the case of thenormal dynamic RAM. In the present specification and drawings, symbol /is used to indicate that a low level is an active level.

Signals φR1 and φR3, outputted from the timing control circuitTG,respectively, are row-system basic timing signals and are used for arow-system selecting operation to be described later. A timing signalφXL is a signal for taking in or capturing a row-system address andholding it, which is supplied to a row address buffer RAB. Namely, therow address buffer RAB takes in or captures addresses inputted fromaddress terminals A8 through A19 of address terminals A0 through A19 inresponse to the timing signal φXL and allows a latch circuit to holdthem therein.

A timing signal φYL is a signal for capturing a column-system addressand holding it, which is supplied to a column address buffer CAB. Thatis, the column address buffer CAB captures addresses inputted from theaddress terminals A0 through A7 of the address terminals A0 through A19in response to the timing signal φYL and allows a latch circuit toretain them therein.

A signal φREF, generated during a refresh mode, is supplied to amultiplexer AMX provided in an input portion of the row address bufferRAB and effects control so that the multiplexer AMX selects a refreshaddress signal generated from a refresh address counter circuit RFCduring the refresh mode. The refresh address counter circuit RFC countsa refresh step pulse (clock signal CLK) φRC produced from a timercircuit included in the timing control circuit TG to create a refreshaddress signal. The present embodiment is constructed so as to have autoand self refreshing operations.

A timing signal φX is a word line select timing signal, which issupplied to a decoder XD and a redundant decoder XRD from which fourkinds of word line select timing signals X0 through X3 and AXR0 throughAXR3 are generated based on decoded signals of address signals of thetwo rightmost bits. A row-system predecoder XPD decodes an internaladdress signal BXi to create predecode signals AXi, AXj and AXk. Atiming signal φY is a column select timing signal, which is supplied toa column-system predecoder YPD together with an internal address signalBYi, from which column predecode signals AYi, AYj and AYk are created.

A timing signal φW is a control signal for providing instructions for awrite operation, whereas a timing signal φR is a control signal forproviding instructions for a read operation. These timing signals φW andφR are supplied to an input/output circuit I/O. In the write operation,the former signal activates an input buffer included in the input/outputcircuit I/O and brings an output buffer thereof into an output highimpedance state. On the other hand, in the read operation, the lattersignal activates the output buffer and brings the input buffer into anoutput high impedance state.

A timing signal φMS is a signal for providing instructions for a matselection operation, which is supplied to the row address buffer RABfrom which mat select signals MS0 through MS7 are outputted insynchronism with the timing signal φMS. A timing signal φSA is a signalfor providing instructions for the operation of each sense amplifier. Inaddition to the formation of a pulse for activating each sense amplifierbased on the timing signal φSA, the timing signal φSA is also used tocreate signals for controlling a precharge completion operation ofcomplementary bit lines and an operation for the separation between bitlines on the non-selected memory mat side.

In the present embodiment, a row-system redundant circuit X-RED isillustrated as a typical example. Namely, the row-system redundantcircuit X-RED includes a memory or storage circuit for storing a failureaddress therein and an address comparison circuit. The row-systemredundant circuit X-RED performs a comparison between the stored failureaddress and an internal address signal BXi outputted from the rowaddress buffer RAB. If they mismatch with each other, then therow-system redundant circuit X-RED brings a signal XRE to a high levelso as to make the operation of a normal circuit effective. If the inputinternal address signal BXi matches with the stored failure address,then the row-system redundant circuit X-RED sets the signal XRE to a lowlevel so as to prohibit the normal circuit from selecting the failureword line and output select signals AXR0 through AXR3 for selecting asingle spare word line.

Although omitted from FIG. 2, a circuit similar to the row-systemcircuit is provided even in the column system. When a memory access to adefective bit line is detected by the circuit, the circuit prohibits acolumn decoder YD from selecting the failure bit line and creates selectsignals for selecting a bit line provided as a spare as an alternativeto the selection operation.

In the present embodiment, two kinds of refresh modes using signalsφSELF and φLSELF are provided. The refresh mode based on the signalφSELF is of a normal self refresh mode, whereas the refresh mode basedon the signal φLSELF is of a novel refresh mode proposed by the presentapplication. Namely, when data is placed in a holding state over arelatively long time as in the case of battery backup or the like, atimer LMTR is activated in response to the signal φLSELF so as togenerate a refresh pulse φRint. Based on the refresh pulse φRint, thetiming control circuit TG generates a row-system basic clock φR1 so asto execute a refresh mode.

The signal φLSELF is called "low power self-refresh mode". A refreshcycle thereof is made longer in unison with an average data holding timeof each memory cell, which is set by the temperature-dependent timerLMTR. Such an increase in refresh cycle makes effective a mode in whichthe data holding state continues over a relatively long period, e.g., adata holding mode with battery backup made under the condition in whicha system power source has been shut down, for example.

When the refresh cycle is made longer as described above, the datastored in a few memory cells, which are likely to fall behind, aredestroyed. To cope with this, the data is renewed in the followingmanner prior to the switching to the refresh mode based on the signalφLSELF. Namely, a storage area is reduced to half and the same data iswritten into two memory cells. When effective data exists in only anarea which is half the whole storage area, for example, the same data iswritten into an empty or vacant area as it is and one data is stored inthe two memory cells. If the effective data exists in a storage areawhich is more than half the total storage area, then the effective datais read out once and subjected to data compression. Further,areascovering half of each whole storage area are double-selected so that onedata is stored in two memory cells. In correspondence with such writingof data, addresses /AX11 and AX11 (address terminal A19) of the mostsignificant bits in an X system are both set to a selection level. Thus,two word lines are double-selected from a memory array so that the samedata is written into the two memory cells brought into the selectedstate.

One of write data supplied from data terminals I/O0 through I/O7 forsuch a write operation is sent so as to be supplied to two memory cellsby a data conversion circuit DSCR. On the other hand, since a readsignal RIOi is read in a two-bit pair upon reading the above signal tobe written, respective bit pairs are ORed by the data conversion circuitDSCR and a logical sum signal corresponding to the result of ORing isoutputted through the data terminals I/O0 through I/O7 as a read signal.

FIG. 3 is a fragmentary circuit diagram showing one example of a memoryarray portion of the dynamic RAM according to the present invention. Thesame drawing typically illustrates four word lines WL0 through WL3 ofthe memory mat MMAT0, redundant word lines RWL0 through RWL3, two pairsof complementary bit lines, and a sense amplifier and a prechargecircuit and the like associated with these. The memory mat MMAT1 isillustrated as a black box. Further, circuit symbols are typicallyapplied to only MOSFETs that constitute respective circuitscorresponding to a pair of complementary bit lines.

Each dynamic memory cell is composed of an address selection MOSFET Qmand an information storage capacitor Cs. The gate of the addressselection MOSFET Qm is electrically connected to its corresponding wordline WL0 and the like and the drain thereof is electrically connected toits corresponding bit line. Further, the source of the MOSFET Qm iselectrically connected with its corresponding information storagecapacitor Cs. Other or plate electrodes of the information storagecapacitors Cs associated with a pair of complementary bit lines arecommonly coupled and supplied with a plate voltage PLT.

The above bit line pairs are arranged in parallel as shown in the samedrawing and are allowed to suitably intersect as necessary to strike abalance between the capacities of the bit lines, for example. Therespective complementary bit line pairs are electrically connected totheir corresponding input/output nodes of the sense amplifier. Eachsense amplifier is composed of N channel MOSFETs Q3 and Q4 and P channelMOSFETs Q1 and Q2 whose respective gates and drains are electricallycross-connected to one another so as to effect a latch circuit. Thesources of the N channel MOSFETs Q3 and Q4 are electrically connected toa common source line CSN. The sources of the P channel MOSFETs Q1 and Q2are electrically connected to a common source line CSP. As illustratedin the common source line CSP by way of example, a power switch MOSFETQ10 of the P channel MOSFET is provided. When a timing signal φSAP isrendered low in level, the MOSFET Q10 is turned on so as to supply avoltage necessary for the operation of each sense amplifier. Anunillustrated N channel MOSFET is connected to the common source lineCSN associated with N channel MOSFETs Q3 and Q4 so that a circuit groundpotential is supplied to provide the timing for operating each senseamplifier.

In order to provide stable sense operations, power switch MOSFETs foractivating the sense amplifiers may be activated in the followingmanner. Namely, for example, such a power switch MOSFET as being capableof supplying only a relatively small current when each sense amplifierhas started its amplifying operation is brought into an on state,andsuch a power switch MOSFET as being able to supply a large current whenthe difference in potential between each individual bit line pair hasbeen increased to some extent by the amplifying operation of each senseamplifier is brought into an on state, whereby a stepwise amplifyingoperation is performed.

A precharge circuit composed of a MOSFET Q7 for short-circuiting eachcomplementary bit line pair and the MOSFET switches Q5 and Q6 forsupplying a half precharge voltage HVC to each complementary bit line isconnected to each input/output node of the sense amplifier. The gates ofthese MOSFETs Q5 through Q7 are commonly supplied with a prechargesignal PCB.

MOSFETs Q8 and Q9 constitute a column switch, switch-controlled inaccordance with a column select signal YS. In the present embodiment,four bit line pairs can be selected by one column select signal YS.Therefore, the column select signal YS is commonly supplied to the gatesof MOSFETs that constitute column switches provided at input/outputnodes of four sense amplifiers associated with the two pairs of bitlines illustrated in the same drawing,by way of example,and theremaining two pairs composed of bit lines alone. The four pairs of bitlines and four pairs of input/output lines /IO0, IO0 through /IO3 andIO3 are respectively connected to one another through such MOSFETswitches.

The memory cells each composed of the switch MOSFET Qm and the capacitorCs are connected to one and the other of each bit line pair at intervalsof two cells. Namely, memory cells are respectively provided at pointsof intersection of one bit line and word lines (0+4N) and (3+4N) andmemory cells are respectively provided at points of intersection of theother bit line and word lines (1+4N) and (2+4N), where N are 0, 1, 2, 3,. . . 63.

As described above, each memory cell composed of the switch MOSFET Qmand the capacitor Cs is electrically connected to one or the other ofthe bit line pair. Where a word line corresponding to the gate of aMOSFET Qm connected to a capacitor Cs is selected when the state of anelectric charge stored in the capacitor Cs of a memory cell connected toone bit line is high in level, the potential of the bit line increasesaccording to the charge share of the bit line and capacitor Cs so that ahigh level read signal is created by an amplifying operation of a senseamplifier subsequent to this increase in potential. Where the word lineconnected with the gate of the MOSFET Qm connected to the capacitor Csis selected when the state of the electric charge stored in thecapacitor Cs is low in level, the potential of the bit line decreasesaccording to the charge share of the capacitor Cs and the bit line sothat a low level read signal is created by an amplifying operation of asense amplifier subsequent to this decrease in potential. Upon a writeoperation, a high level is supplied to the capacitor Cs when writeinformation is high in level, whereas a low level is supplied to thecapacitor Cs when the write information is low in level.

In the case of a memory cell connected to the reversed bit line of eachbit line pair referred to above, the level of information to be read orwritten becomes opposite to the state of an electric charge in thememory cell. Namely, in the case of memory cells connected to the wordlines WL (1+4N) and WL (2+4N), the level of input/output information isidentical to the state of an electric charge stored in a capacitor ofeach memory cell. However, in the case of memory cells connected to theword lines WL (0+4N) and WL (3+4N), the level of input/outputinformation becomes opposite to the state of an electric charge storedin a capacitor of each memory cell.

Therefore, the data conversion circuit shown in FIG. 2 is supplied withaddress signals BX0 and BX1 or RX0 through RX3 and performs a dataconversion operation for converting the state of an electric charge to alogic 1 when its state is high in level, together with the supplyoperation. Namely, when the word lines (1+4N) and WL (2+4N) areselected, a read signal is input to an OR circuit as it is, whereas whenthe word lines (0+4N) and WL (3+4N) are selected, the read signal isreversed, followed by inputting to the OR circuit.

This means the following. In other words, the information is destroyedas in the case where the state of an electric charge in each of thememory cells whose data holding times are extremely short, which arelikely to be left behind as it were, is brought from a high level to alow level due to a leakage current. On the other hand, when the state ofthe electric charge thereof is low in level, it remains unchanged as itis even if the leakage current flows. Thus, when the data is outputtedas it is, for example, in the case where the state of the electriccharge in each of the memory cells connected to the word lines WL (0+4N)and WL (3+4N), described above, is changed from high to low level due tothe leakage, the high level data is preferentially outputted accordingto the above ORing operation even when the normal low level is outputtedfrom the other memory cell, whereby incorrect data is outputted.Therefore, when the memory cells connected to the word lines WL (0+4N)and WL (3+4N) are selected as described above, their read levels areinverted, followed by supplying the same to the OR circuit.

In the present embodiment, the two memory cells are used so as to storethe same data in the data holding mode. Since the number of the memorycells which are short in the data holding time and are likely to be leftbehind is extremely small, the two memory cells may be both regarded asones free of falling behind. Therefore, even when one of the two memorycells, whose state of charge is to be kept high in level, is brought toa low level due to the formation of the output signal corresponding tothe logic 1 by the logical sum signal referred to above, an outputsignal of a logic 1, corresponding to the high level at which the stateof charge is represented, is obtained from the other memory cell.

By setting the data holding time of each memory cell to the average longcycle owing to the adoption of such a construction, the self-refreshperiod in the data holding state can be made longer and,correspondingly,current consumption in the data holding state can be reduced to theextent comparable to that of the static RAM. In the present embodiment,the use of the dynamic memory cells makes possible a great increase instorage capacity. Further, the compatibility between the input/outputinterface and the static RAM,as described above,makes it possible toreplace the static RAM with the interface although there is noparticular restraint on it.

FIG. 4 is a schematic circuit diagram of one example of a read systemcircuit included in the aforementioned data conversion circuit DSCR. Ina memory array ARRAY0, memory cells each composed of a switch MOSFET Qmand a capacitor Cs are provided at points of intersection of bit linesBL and /BL on the non-inversion and inversion sides and word lines WL0through WL3 between one bit line /BL of each complementary bit line pairand the other bit line BL thereof at intervals of two memory cells.Namely, as shown in FIG. 3, the memory cells are provided at the pointsof intersection of the one bit line /BL and the word lines WL0 and WL3and the memory cells are provided at the points of intersection of theother bit line BL and the word lines WL1 and WL2. Subsequently, thememory cells are successively provided according to this rule.Similarly, spare memory cells are provided according to the rule in thesame manner as described above, even in the case of redundant word linesRWL0 through PWL3. The other memory array ARRAY1 is not described in thesame drawing but is identical in structure to the memory array ARRAY0.

When an electric charge of a capacitor Cs of each memory cell connectedto one bit line /BL,referred to above,is read as being in a state inwhich the electric charge exists in the capacitor Cs, a logic 0 isoutput. Namely, since the bit line /BL becomes a high level and the bitline BL becomes a low level, input/output lines /IO and IO become highand low levels,respectively, when such a complementary bit line pair isselected by a column switch. Further, an amplified output signalproduced from a main amplifier MA for amplifying the levels becomes alow level and hence a logic 0 is output in the case of one that assumesthe positive logic. In such a memory cell, a logic 1 is output when thestored electric charge of high level disappears due to the leakagecurrent and thereby reaches a low level. Thus, when the output of ORingof signals read from two memory cells is simply produced, the logic 1corresponding to the destroyed data is preferentially read even thoughthe read signal of the proper logic 0 is outputted from the other memorycell. In order to avoid this, the following data conversion circuit isprovided.

In the semiconductor memory device according to the present embodiment,if the selected memory cell is connected to one bit line /BL asdescribed above when the logic 1 is written into two memory cells of thememory arrays ARRAY0 and ARRAY1 in the specific write mode describedabove, data is converted into inverted data by the data conversioncircuit DSCR so that the low and high levels are respectively sent tothe input/outputs IO and /IO, whereby the high level indicative ofpresence of the electric charge is written into the correspondinginformation storage capacitor of each memory cell referred to above.Namely, the logic 1 is stored in the corresponding memory cell in thespecific write mode described above if the electric charge uniformlyexists in the capacitor, irrespective of whether a bit line connected toa memory cell to be noted is /BL or BL. If no electric charge exists inthe capacitor, then the logic 0 is stored in the corresponding memorycell.

In order to perform the data conversion so that the logic 1 is output ifthe electric charge exists in each capacitor and the logic 0 is outputif no electric charge exists in each capacitor when a specific read modeis designated, two memory arrays ARRAY0 and ARRAY1 are selected andmemory cells connected to an inverted bit line /BL as in the case ofword lines WL1 and WL3 are selected, the output of the main amplifier MAis subjected to conversion and synthesis by the data conversion circuitDSCR. The four word lines such as the word lines WL0 through WL3 arecombined into a set and are respectively determined depending on outputsobtained by decoding address signals BX0 and BX1 of the two rightmostbits.

Namely, when the address signals BX0 and BX1 of the two rightmost bitsare both at logic 0 or at logic 1, WL (0+4N) and WL (3+4N) such as theword lines WL0 and WL3 are selected. Therefore, an exclusive OR circuitdetects the same logic levels 0 and 1 as those of the address signalsBX0 and BX1 of the two rightmost bits and at that time forms a detectedsignal of the logic 0. Exclusive NOR circuits EXNOR1 and EXNOR2respectively supplied with signals read through the main amplifiers MAfrom the two memory array ARRAY0 and ARRAY1 are controlled based on. thelogic 0 indicative of the detected signal thereby to invert the readsignals.

Namely, if the output signals from the main amplifiers MA for the twomemory arrays ARRAY0 and ARRAY1 are respectively a high level (logic 1),then the signals are inverted to a low level (logic 0). If they arerespectively a low level (logic 0), then the signals are inverted into ahigh level (logic 1).

When one of the address signals BX0 and BX1 of the two rightmost bits isof a logic 0 and the other thereof is at a logic 1, WL (1+4N) and WL(2+4N) such as the word lines WL1 and WL2 are selected. Therefore, theexclusive OR circuit EXOR detects a mismatch between the address signalsBX0 and BX1 of the two rightmost bits and at that time produces adetected signal of a logic 1. The exclusive NOR circuits EXNOR1 andEXNOR2 respectively supplied with signals read through the mainamplifiers MA from the two memory array ARRAY0 and ARRAY1 are controlledbased on the logic 1 indicative of the detected signal so that the readsignals are transmitted as they are.

Thus, the read signal associated with the write operation can beobtained so that the logic 1 is stored in the corresponding memory cellin the specific write mode as described above if the electric chargeuniformly exists in each capacitor and the logic 0 is stored in thememory cell if no electric charge exists in each capacitor. In thiscase, owing to the setting of a refresh cycle to a relatively longperiod, the proper read signal can be obtained from the other memorycell upon reading the held data in a data holding mode even if theinformation stored in one of two memory cells is destroyed due to theleakage current.

Although not shown in the same drawing, a write system data conversioncircuit consists of circuits similar to the exclusive OR circuit EXORsupplied with the address signals BX0 and BX1 of the two rightmost bitsand the exclusive NOR circuits EXNOR1 and EXNOR2 controlled based on thedetected signal. Data about write signals are converted as describedabove so as to be sent to input/output lines IO and /IO associated withmemory arrays ARRAY0 and ARRAY1.

FIG. 5(A) is a schematic circuit diagram of another example of the readsystem circuit. A data conversion circuit DSCR and first and second mainamplifiers are included in a read circuit RCKT. The present example isdifferent in memory array configuration from the example shown in FIG.4. Namely, a memory array ARRAY0 (ARRAY1) includes memory cells providedat points of intersection of one bit line /BL and word lines WL0 and WL1(WL0' and WL1'), of points of intersection of bit lines BL and /BL onthe non-inversion and inversion sides and word lines WL0 through WL3(WL0' through WL3') and memory cells provided at points of intersectionof the other bit line BL and word lines WL2 and WL3 (WL2' and WL3').Subsequently, memory cells are successively provided in accordance withsuch a rule. Similarly, spare memory cells are provided in accordancewith this rule in the same manner as described above even in the case ofredundant word lines RWL0 through RWL3 (RWO' through RWL3').

In this configuration, the word lines WL0 and WL1 are selected if anaddress signal BX1 is of a logic 0, so that memory cells connected tothe bit line /BL,on the inversion side,are specified. If the addresssignal BX1 is a logic 1, then the word lines WL2 and WL3 are selected sothat memory cells connected to the bit line BL,on the non-inversionside,are specified. Consequently, exclusive NOR circuits EXNOR1 andEXNOR2 in the data conversion circuit DSCR are controlled using such anaddress signal BX1. Namely, when the address signal BX1 is of the logic0, the exclusive NOR circuits EXNOR1 and EXNOR2 respectively invertsignals read from the memory cells connected to the bit line /BL on theinversion side. On the other hand, when the address signal BX1 is of thelogic 1, the exclusive NOR circuits EXNOR1 and EXNOR2 respectively sendsignals read from the memory cells connected to the bit line BL on thenon-inversion side as they are.

Although not shown in the same drawing, a write system data conversioncircuit is composed of circuits similar to the exclusive NOR circuitsEXNOR1 and EXNOR2 controlled based on the address signal BX1. The dataconversion circuit performs conversion on data about write signals inthe above-described manner and transmits the converted data toinput/output lines IO and /IO associated with the memory arrays ARRAY0and ARRAY1.

The operation of the circuit shown in FIG. 5(A) will be described indetail below.

There are shown in FIG. 5(A), a first memory array (ARRAY0) whichcomprises a first complementary data line pair including a first wordline (WL2), a second word line (WL1), a first data line (BL1) and asecond data line (/BL1); a first memory cell (MC1) provided so as tocorrespond to a point of intersection of the first word line (WL2) andthe first data line (BL1); a second memory cell (MC2) provided so as tocorrespond to a point of intersection of the second word line (WL1) andthe second data line (/BL1); a first sense amplifier (SA1) electricallyconnected to the first data line (BL1) and the second data line (/BL1);a first common complementary data line pair including a first commondata line (IO1) and a second common data line (/IO1); a first switch(SW1) electrically connected between the first data line (BL1) and thefirst common data line (IO1); and a second switch (SW2) electricallyconnected between the second data line (/BL1) and the second common dataline (/IO1), a second memory array (ARRAY1) which comprises a secondcomplementary data line pair including a third word line (WL2'), afourth word line (WL1'), a third data line (BL2) and a fourth data line(/BL2); a third memory cell (MC3) provided so as to correspond to apoint of intersection of the third word line (WL2') and the third dataline (BL2); a fourth memory cell (MC4) provided so as to correspond to apoint of intersection of the fourth word line (WL1') and the fourth dataline (/BL2); a second sense amplifier (SA2) electrically connected tothe third data line (BL2) and the fourth data line (/BL2); a secondcommon complementary data line pair including a third common data line(IO2) and a fourth common data line (/IO2); a third switch (SW3)electrically connected between the third data line (BL2) and the thirdcommon data line (IO2); and a fourth switch (SW4) electrically-connectedbetween the fourth data line (/BL2) and the fourth common data line(/IO2), and a read circuit (composed of MA1, MA2, ENOR1, ENOR2 and OR)electrically connected to the first common complementary data line pair(IO1 and /IO1) and the second common complementary data line pair (IO2and /IO2) so as to output a read signal (RIO) therefrom.

Each of the first memory cell (MC1), second memory cell (MC2), thirdmemory cell (MC3) and fourth memory cell (MC4) is of a dynamic memorycell which has an address selection MOSFET and an information storagecapacitor coupled thereto and which has an information holdingcapability which is volatile.

The word lines (WL0, WL1, . . . ) of the first memory array correspondto the word lines (WL0', WL1', . . . ) of the second memory array. Uponwriting and reading, one word line (WLi) of the first memory array andone word line (WLi') corresponding thereto of the second memory arrayare simultaneously selected. For example, the first word line (WL2) andthe third word line (WL2') are simultaneously brought to a selectionlevel (high level), whereas the second word line (WL1) and the fourthword line (WL1') are simultaneously brought to the selection level. Inother words, the same address is assigned to the first word line (WL2)and the third word line (WL2') and the same address is assigned to thesecond word line (WL1) and the fourth word line (WL1').

When memory cells connected to the first data line (BL1) and the thirddata line (BL2) are selected, an address signal BX1 is brought to a highlevel (logic 1). When memory cells connected to the second data line(/BL1) and the fourth data line (/BL2) are selected, the address signalBX1 is brought to a low level (logic 0). When the first common data line(IO1) is rendered high (low) in level and the second common data line(/IO1) is rendered low (high) in level, the first main amplifier (MA1)outputs a high (low) level signal therefrom. When the third common dataline (IO2) is brought to a high (low) level and the fourth common dataline (/IO2) is brought to a low (high) level, the second main amplifier(MA2) outputs a high (low) level signal therefrom.

Where read data sent from the first memory cell (MC1) to the firstcommon data line (IO1) is a high level and read data sent from the thirdmemory cell (MC3) to the third common data line (IO2) is a high levelwhen the address signal BX1 is brought to the high level (logic 1) andthe first word line (WL2) and the third word line (WL2') are brought tothe selection level, the read signal (RIO) is set to a first voltage(high level).

Where the read data sent from the first memory cell (MC1) to the firstcommon data line (IO1) is high in level and the read data sent from thethird memory cell (MC3) to the third common data line (IO2) is low inlevel when the address signal BX1 is brought to the high level (logic 1)and the first word line (WL2) and the third word line (WL2') are broughtto the selection level, the read signal (RIO) is set to the firstvoltage (high level).

Where the read data sent from the first memory cell (MC1) to the firstcommon data line (IO1) is low in level and the read data sent from thethird memory cell (MC3) to the third common data line (I02) is high inlevel when the address signal BX1 is brought to the high level (logic 1)and the first word line (WL2) and the third word line (WL2') are broughtto the selection level, the read signal (RIO) is set to the firstvoltage (high level).

Where the read data sent from the first memory cell (MC1) to the firstcommon data line (IO1) is low in level and the read data sent from thethird memory cell (MC3) to the third common data line (IO2) is low inlevel when the address signal BX1 is brought to the high level (logic 1)and the first word line (WL2) and the third word line (WL2') are broughtto the selection level, the read signal (RIO) is set to a second voltage(low level).

Where read data sent from the second memory cell (MC2) to the secondcommon data line (/IO1) is high in level and read data sent from thefourth memory cell (MC4) to the fourth common data line (/IO2) is highin level when the address signal BX1 is brought to a low level (logic 0)and the second word line (WL1) and the fourth word line (WL1') arebrought to a selection level, the read signal (RIO) is set to the firstvoltage (high level).

Where the read data sent from the second memory cell (MC2) to the secondcommon data line (/IO1) is high in level and the read data sent from thefourth memory cell (MC4) to the fourth common data line (/IO2) is low inlevel when the address signal BX1 is brought to the low level (logic 0)and the second word line (WL1) and the fourth word line (WL1') arebrought to the selection level, the read signal (RIO) is set to thefirst voltage (high level).

Where the read data sent from the second memory cell (MC2) to the secondcommon data line (/IO1) is low in level and the read data sent from thefourth memory cell (MC4) to the fourth common data line (/IO2) is highin level when the address signal BX1 is brought to the low level (logic0) and the second word line (WL1) and the fourth word line (WL1') arebrought to the selection level, the read signal (RIO) is set to thefirst voltage (high level).

Where the read data sent from the second memory cell (MC2) to the secondcommon data line (/IO1) is low in level and the read data sent from thefourth memory cell (MC4) to the fourth common data line (/IO2) is low inlevel when the address signal BX1 is brought to the low level (logic 0)and the second word line (WL1) and the fourth word line (WL1') arebrought to the selection level, the read signal (RIO) is set to thesecond voltage (low level).

Further, FIG. 5(B) is a schematic circuit diagram of a further exampleof the read circuit. The operation of the read circuit shown in FIG.5(B) will now be described in detail below.

There are shown in FIG. 5(B), a first memory array (ARRAY0) whichcomprises a first complementary data line pair including a first wordline (WL2), a second word line (WL1), a first data line (BL1) and asecond data line (/BL1); a first memory cell (MC1) provided so as tocorrespond to a point of intersection of the first word line (WL2) andthe first data line (BL1); a second memory cell (MC2) provided so as tocorrespond to a point of intersection of the second word line (WL1) andthe second data line (/BL1); a first sense amplifier (SA1) electricallyconnected to the first data line (BL1) and the second data line (/BL1);a first common complementary data line pair including a first commondata line (IO1) and a second common data line (/IO1); a first switch(SW1) electrically connected between the first data line (BL1) and thefirst common data line (IO1); and a second switch (SW2) electricallyconnected between the second data line (/BL1) and the second common dataline (/IO1), a second memory array (ARRAY1) which comprises a secondcomplementary data line pair including a third word line (WL2'), afourth word line (WL1'), a third data line (BL2) and a fourth data line(/BL2); a third memory cell (MC3) provided so as to correspond to apoint of intersection of the third word line (WL2') and the third dataline (BL2); a fourth memory cell (MC4) provided so as to correspond to apoint of intersection of the fourth word line (WL1') and the fourth dataline (/BL2); a second sense amplifier (SA2) electrically connected tothe third data line (BL2) and the fourth data line (/BL2); a secondcommon complementary data line pair including a third common data line(IO2) and a fourth common data line (/I02); a third switch (SW3)electrically connected between the third data line (BL2) and the thirdcommon data line (I02); and a fourth switch (SW4) electrically connectedbetween the fourth data line (/BL2) and the fourth common data line(/I02), and a read circuit (composed of MA1, MA2, ENOR1, ENOR2, ENOR3and OR) electrically connected to the first common complementary dataline pair (IO1 and /IO1) and the second common complementary data linepair (IO2 and /IO2) so as to output a read signal (RIO) therefrom.

Each of the first memory cell (MC1), second memory cell (MC2), thirdmemory cell (MC3) and fourth memory cell (MC4) is of a dynamic memorycell which has an address selection MOSFET and an information storagecapacitor coupled thereto and which has an information holdingcapability which is volatile.

The word lines (WL0, WL1, . . . ) of the first memory array correspondto the word lines (WL0', WL1', . . . ) of the second memory array. Uponwriting and reading, one word line (WLi) of the first memory array andone word line (WLi') corresponding thereto of the second memory arrayare simultaneously selected. For example, the first word line (WL2) andthe third word line (WL2') are simultaneously brought to a selectionlevel (high level), whereas the second word line (WL1) and the fourthword line (WL1') are simultaneously brought to the selection level. Inother words, the same address is assigned to the first word line (WL2)and the third word line (WL2') and the same address is assigned to thesecond word line (WL1) and the fourth word line (WL1').

When memory cells connected to the first data line (BL1) and the thirddata line (BL2) are selected, an address signal BX1 is brought to a highlevel (logic 1). When memory cells connected to the second data line(/BL1) and the fourth data line (/BL2) are selected, the address signalBX1 is brought to a low level (logic 0). When the first common data line(IO1) is rendered high (low) in level and the second common data line(/IO1) is rendered low (high) in level, the first main amplifier (MA1)outputs a signal high (low) in level therefrom. When the third commondata line (IO2) is brought to a high (low) level and the fourth commondata line (/IO2) is brought to a low (high) level, the second mainamplifier (MA2) outputs a high (low) level signal therefrom.

Where read data transmitted from the first memory cell (MC1) to thefirst common data line (IO1) is a high level and read data sent from thethird memory cell (MC3) to the third common data line (IO2) is a highlevel when the address signal BX1 is brought to the high level (logic 1)and the first word line (WL2) and the third word line (WL2') are broughtto the selection level, the read signal (RIO) is set to a first voltage(high level).

Where the read data transmitted from the first memory cell (MCI) to thefirst common data line (IO1) is high in level and the read data sentfrom the third memory cell (MC3) to the third common data line (IO2) islow in level when the address signal BX1 is brought to the high level(logic 1) and the first word line (WL2) and the third word line (WL2')are brought to the selection level, the read signal (RIO) is set to thefirst voltage (high level).

Where the read data transmitted from the first memory cell (MC1) to thefirst common data line (IO1) is low in level and the read data sent fromthe third memory cell (MC3) to the third common data line (IO2) is highin level when the address signal BX1 is brought to the high level(logic 1) and the first word line (WL2) and the third word line (WL2')are brought to the selection level, the read signal (RIO) is set to thefirst voltage (high level).

Where the read data transmitted from the first memory cell (MC1) to thefirst common data line (IO1) is low in level and the read data sent fromthe third memory cell (MC3) to the third common data line (IO2) is lowin level when the address signal BX1 is brought to the high level(logic 1) and the first word line (WL2) and the third word line (WL2')are brought to the selection level, the read signal (RIO) is set to asecond voltage (low level).

Where read data transmitted from the second memory cell (MC2) to thesecond common data line (/IO1) is high in level and read data sent fromthe fourth memory cell (MC4) to the fourth common data line (/IO2) ishigh in level when the address signal BX1 is brought to a low level(logic 0) and the second word line (WL1) and the fourth word line (WL1')are brought to the selection level, the read signal (RIO) is set to thesecond voltage (low level).

Where the read data transmitted from the second memory cell (MC2) to thesecond common data line (/IO1) is high in level and the read data sentfrom the fourth memory cell (MC4) to the fourth common data line (/IO2)is low in level when the address signal BX1 is brought to the low level(logic 0) and the second word line (WL1) and the fourth word line (WL1')are brought to the selection level, the read signal (RIO) is set to thesecond voltage (low level).

Where the read data transmitted from the second memory cell (MC2) to thesecond common data line (/IO1) is low in level and the read data sentfrom the fourth memory cell (MC4) to the fourth common data line (/IO2)is high in level when the address signal BX1 is brought to the low level(logic 0) and the second word line (WL1) and the fourth word line (WL1')are brought to the selection level, the read signal (RIO) is set to thesecond voltage (low level).

Where the read data transmitted from the second memory cell (MC2) to thesecond common data line (/IO1) is low in level and the read data sentfrom the fourth memory cell (MC4) to the fourth common data line (/IO2)is low in level when the address signal BX1 is brought to the low level(logic 0) and the second word line (WL1) and the fourth word line (WL1')are brought to the selection level, the read signal (RIO) is set to thefirst voltage (high level).

FIG. 6 is a circuit diagram showing one example of the aforementionedexclusive NOR circuit. In the present example, attention is paid to theoperation of the exclusive NOR circuit EXNOR. A locked inverter circuitCN1 is activated in response to the high level (logic 1) of the addresssignal BX1 as described above so that an output signal MAout from a mainamplifier is outputted as a synchronizing signal as it is through aninverter circuit N1 and the clocked inverter circuit CN1 placed inoperation. At this time, a clocked inverter circuit CN2 is brought intoa non-operating state in response to a low level of a signal output froman inverter circuit N2 supplied with the high level of the addresssignal BX1 so that the output thereof is brought into a high impedancestate.

When the address signal BX1 is of the low level (logic 0), the clockedinverter circuit CN1 is deactivated so that the output thereof isbrought into the high impedance state. In response to the low level ofthe address signal BX1, the signal output from the inverter circuit N2is brought to a high level to activate the clocked inverter circuit CN2,whereby the output signal MAout of the main amplifier can be invertedand outputted.

FIG. 7 is a circuit diagram showing another example of the dataconversion circuit according to the present invention. In the presentexample, the data conversion circuit is provided for complementaryinput/output lines IO and /IO on the memory array side. When the wordlines WL0 and WL1 are selected from the memory array as shown in FIG. 5,memory cells connected to a bit line /BL on the inversion side areselected. When the word lines WL2 and WL3 are selected, memory cellsconnected to a bit line BL on the non-inversion side are selected. Inthis case, a first transmission path, which is composed of transmissiongate MOSFETs Q1 and Q2 and allows a signal to pass therethrough as itis, and a second transmission path, which is composed of transmissiongate MOSFETs Q3 and Q4 and inverts the signal, are provided between thecomplementary input/output lines IO and /IO and input terminals (outputterminal)of a write amplifier (not shown).

When an address signal BX1 is high in level, the MOSFETs Q1 and Q2,thatconstitute the aforementioned first transmission path, are turned on sothat a read signal produced from each memory cell connected to the bitline BL of the memory array is supplied to its corresponding inputterminal of the main amplifier MA as it is. When the address signal BX1is low in level, the MOSFETs Q3 and Q4 that constitute the secondtransmission path, are turned on so as to bring a signal output from aninverter circuit N3 to a high level. Owing to the turning on of theMOSFETs Q3 and Q4 that forms the second transmission path, acomplementary read signal produced from each memory cell connected tothe bit line /BL of the memory array is inverted and transmitted to itscorresponding input terminal of the main amplifier MA.

The first and second transmission paths are also used for a dataconversion operation of a write system. Namely, when the MOSFETs Qi andQ2 that constitute the first transmission path, are brought into the onstate at the high level of the address signal BX1 so as to transmit awrite signal to its corresponding memory cell connected to the bit lineBL of the memory array, an output signal from the unillustrated writeamplifier is sent to the input/output lines IO and /IO as it is. On theother hand, when the MOSFETs Q3 and Q4 that constitute the secondtransmission path, are brought to the on state at the low level of theaddress signal BX1 so as to transmit a write signal to its correspondingmemory cell connected to the bit line /BL of the memory array, thesignal output from the unillustrated write amplifier is inverted andsent to the input/output lines IO and /IO.

It is desirable that if it is necessary to respectively set high and lowlevels of the write signal sent to the input/output lines IO and /IO toa high level corresponding to a source voltage Vcc and a low levelcorresponding to a circuit ground potential, then CMOS switches composedof N channel MOSFETs and P channel MOSFETs connected in parallel areused as the MOSFET switches Q1 through Q4. Since high and low levelsamplified by a sense amplifier are transmitted as high and low levels tobe actually written into a memory cell, the high and low levels of thewrite signal transmitted to the input/output lines IO and /IO may belevels necessary to invert the sense amplifier.

FIG. 8 is a layout diagram of memory arrays employed in one embodimentof a dynamic RAM to which the present invention is applied. The dynamicRAM according to the present embodiment is not particularly limited buthas a storage capacity of about 8 Mbits.

The whole chip is divided into two corresponding to the left and rightportions. The left and right portions are divided according to the mostsignificant addresses X11 and /X11 of X addresses. Further, the wholechip is divided into two upper and lower portions. The upper half isassociated with four bits of data terminals I/O4 through I/O7, whereasthe lower half is associated with four bits of data terminals I/O0through I/O3. The arrays divided into the four as described above areassociated with the arrays ARRAY0 through ARRAY3 shown in FIG. 1. Eightmemory mats MMATs in one array are specified by addresses AX8 throughAX10 of the three leftmost bits.

Arrows marked on the memory mats show the direction in which theaddresses advance. In the same drawing, refresh is successively effectedon the two arrays of the right half in 2048 cycles (256×8). The normalself-refresh using the signal φSELF is successively performed on the twomemory arrays of the left half in a cycle ranging from 2049 to 4096cycles. On the other hand, since the most significant addresses AX11 and/AX11 are both brought to a selection level (degenerated) under the lowpower refresh based on the signal φLSELF referred to above and wordlines are simultaneously selected from the two arrays on the left andright sides, the refresh operation is terminated in the 2048 cycles.

Namely, one memory mat has 256 word lines. One of the 256 word lines isselected in accordance with 8 bits composed of address signals AX0through AX7. On the other hand, four pairs of bit lines are selectedfrom pairs of 256×4 bit lines in accordance with column addresses AY0through AY7.

Correspondence diagrams showing the layouts of external and internaladdresses are respectively illustrated in FIGS. 23 and 24 in an easystyle. In this way, the dynamic RAM according to the present embodimentis called an address non-multi type based on a so-called static RAM. AXare assigned to internal addresses for principally selecting word lines,whereas AY are assigned to internal addresses for principally selectingbit lines. It is needless to say that the dynamic RAM may be one forinputting an address signal in accordance with an address multi systemas in the case of the conventional dynamic RAM.

FIG. 25 shows the relationship among the arrays ARRAY, memory arraysMARY shown in FIG. 1 and their corresponding addresses /AX11 and AX11,main amplifiers MA and write drivers WD.

Arrows marked on each memory mat indicate the directions of theaddresses. Namely, the arrays are successively refreshed from top tobottom as seen in the same drawing. The refresh cycle reaches 8192cycles when they are successively refreshed in the direction indicatedby arrow in the same drawing and hence a memory access is restricted.Therefore, four memory mats specified by an address X12, for example,are simultaneously selected so as to be simultaneously refreshed asdescribed above, whereby the refresh on all arrays is terminated in 4096(about 4K) cycles.

FIGS. 9(A) and 9(B) respectively show schematic timing charts fordescribing refresh operations of the dynamic RAM according to thepresent invention. FIG. 9(A) illustrates a normal refresh operation andFIG. 9(B) shows a low power refresh operation proposed by the presentinvention.

Although there is no particular restraint on FIG. 9(A), fixed timercyclic or periodic refresh is executed. This refresh mode is started bysetting an output enable signal /OE to a low level prior to the settingof a chip enable signal /CE to a low level. That is, the chip enablesignal /CE is rendered low in level after the output enable signal /OEhas been brought to the low level. When this state continues for apredetermined period or more, a signal φSELF is generated. During aperiod in which the self-refresh signal φSELF is high in level, arow-system main clock φR1 is generated by a built-in timer circuit.Thus, the operation for selecting a word line, the operation for readinga signal from a memory cell under the activation of a sense amplifierand amplifying it, and a refresh operation of re-writing of theamplified signal into the memory cell are executed.

One cycle or period of the refresh signal φSELF, i.e., a refresh timerequired to refresh all the memory cells in the dynamic RAM,is set by aROM or the like using a polysilicon fuse or the like not so as to exceedthe minimum data holding time of each memory cell of such a dynamic RAM,which is likely to fall behind as described above. Although norestriction is given in particular, a self-refresh period of a signalφR1, which includes concentrated refresh made in 4096 cycles, is set notso as to exceed the minimum data holding time as described above.Incidentally, the address signals AX11 and /AX11 may be invalidated sothat the refresh is done in 2048 cycles.

Although there is no particular restraint on FIG. 9(B),temperature-dependent timer cyclic or periodic refresh is executed. Thisrefresh mode is started by setting an output enable signal /OE and awrite enable signal /WE to a low level prior to the setting of a chipenable signal /CE to a low level. That is, the chip enable signal /CE isrendered low in level after the output enable signal /OE and the writeenable signal /WE have been brought to the low level. When this statecontinues for a predetermined period or more, a signal φLSELF isgenerated. During a period in which the self-refresh signal φLSELF ishigh in level, a row-system main clock φR1 is generated by a built-intemperature-dependent timer circuit. Thus, the operation for selecting aword line, the operation for reading a signal from a memory cell underthe activation of a sense amplifier and amplifying it, and a refreshoperation of re-writing of the amplified signal into the memory cell areexecuted.

One cycle or period of the refresh signal φLSELF, i.e., a refresh timerequired to refresh all the memory cells in the dynamic RAM, is set bythe temperature-dependent timer circuit,to be described later,not so asto exceed an average data holding time of a memory cell of such adynamic RAM. In this case, the address signals AX11 and /AX11 areinvalidated so that the concentrated refresh is done in the 2048 cycles.Prior to the refresh mode, the same data is held in two memory cellssimultaneously selected from two memory arrays divided by the addresssignals AX11 and /AX11.

FIG. 10 is a schematic block diagram showing one example of thetemperature-dependent timer. Although there is no particular restrainton a capacitor C, the temperature-dependent timer is constructed in sucha way that capacitors of 1024 memory cells are electrically connected inparallel. When a conductor trace or wire corresponding to a word lineconnected with the gate of each of MOSFETs Qm for address selection,which constitute memory cells, is electrically connected to a groundpotential in a circuit, the MOSFET Qm for address selection is steadilybrought into an off state. A MOSFET Q is a switch MOSFET for prechargingthe capacitor C and consists of a MOSFET different from the addressselection switch MOSFET. The address selection switch MOSFET may be usedas an alternative to this.

A voltage held by the capacitor C is supplied to an inversion input--ofa voltage comparison circuit COMP. A reference voltage VREF is appliedto a non-inversion input+of the voltage comparison circuit COMP. Asignal φSTART outputted from the voltage comparison circuit COMP issupplied to a set input S of a flip-flop circuit FF. A pulse φTMRoutputted from an output Q of the flip-flop circuit FF is supplied tothe gate of the switch MOSFET Q, on the one hand,and is input to anoscillator circuit OSC, on the other hand,to control the effectivenessand/or ineffectiveness of an oscillating operation. When the oscillatingoperation of the oscillator circuit OSC is made effective, theoscillator circuit OSC generates oscillations to form an oscillatingpulse φRint. The pulse φRint is supplied to the timing control circuitTG from which the row-system main clock φR1 is generated.

The pulse φRint is supplied to a counter circuit CNTR. When the countercircuit CNTR counts 4096 or 2048, the counter circuit CNTR generates atermination signal φSTOP therefrom. An address counter for forming arefresh address may be used as an alternative to the counter circuitCNTR. In response to the termination signal φSTOP, the flip-flop circuitFF is reset so that the switch MOSFET Q is turned off and the timercircuit TIMER is deactivated.

FIG. 11 is a timing chart for describing the operation of thetemperature-dependent timer. When the voltage held by the capacitor Creaches the reference voltage VREF, the voltage comparison circuit COMPbrings the output signal φSTART to a high level. Thus, the flip-flopcircuit FF is set so that the output pulse φTMR is brought to a highlevel so as to turn on the switch MOSFET Q, whereby the precharge of thecapacitor C is started. In conjunction with this operation, the timercircuit TIMER starts oscillating to generate a row-system main clocksignal φR1 and a pulse φRC to be supplied to a refresh control circuitRFC, whereby concentrated refresh is started based on a row-systemselecting operation and a refresh address stepping operation.

The row-system main clock signal φR1 is formed 4096 times or cycles(corresponding to counted values 4095) so as to correspond to the pulseφRint generated from the oscillator circuit OSC so that 4096 word linesare successively selected. When refresh operations of memory cellsselected for such word lines are completed, the termination signal φSTOPis generated from the counter circuit CNTR. As a result, the flip-flopcircuit FF is reset to turn off the switch MOSFET Q, so that theprecharge operation of the capacitor C is terminated. Thus, thecapacitor C holds a precharged voltage VN therein and the timer circuitTIMER stops oscillating so as to enter into a pause period or timeinterval. The pause period corresponds to the time between a reductionin holding voltage VN of the capacitor C due to the leakage current andthe attainment to the reference voltage VREF. The pause time is of atime interval during which the capacitor C is modeled after each memorycell and which depends on the temperature as described above because areduction in potential due to the discharge of an electric charge storedin the capacitor C is affected by ambient temperatures and a sourcevoltage. Since about 1024 memory cells are particularly used whereincapacitors thereof are connected in parallel, the average charge holdingtime of the entire memory cells is held.

FIGS. 12(A) and 12(B) are respectively schematic timing charts fordescribing the operation of the dynamic RAM according to the presentinvention. FIG. 12(A) shows normal read and write operations and FIG.12(B) illustrates read and write operations under a dual memory cellsystem.

Referring to FIG. 12(A), a row-system main clock timing signal XRl isgenerated where an output enable signal /OE and a write enable signal/WE are high in level when a chip enable signal /CE becomes active (lowin level). Word lines specified by an internal address signal AX11 andunillustrated AX0 through AX10 are selected based on the timing signalφR1. Similarly, a bit line pair specified by each of unillustratedinternal address signals AY0 through AY7 is selected. If the writeenable signal /WE is high in level during a period in which the outputenable signal /OE is active (low in level), then data in a memory cellof a designated ARRAY2 is output through its corresponding data terminalI/O. If the write enable signal /WE is low in level during the period inwhich the output enable signal /OE is active (low in level), then awrite signal input from the data terminal I/O is written into thecorresponding memory cell of the designated ARRAY2.

Referring to FIG. 12(B), a row-system main clock timing signal φR1 isgenerated where an output enable signal /OE and a write enable signal/WE are high in level when a chip enable signal /CE becomes active (lowin level). Based on the timing signal φR1, an internal address signalAX11 is invalidated so that regions ARRAY2 and ARRAY0 divided into twoby the internal address signal AX11 are simultaneously selected. Namely,word lines specified by unillustrated AX0 through AX10 aresimultaneously selected from the memory arrays ARRAY2 and ARRAY0.Similarly, a bit line pair specified by each of unillustrated internaladdress signals AY0 through AY7 is selected.

If the write enable signal /WE is high in level during the period inwhich the output enable signal /OE is active (low in level), then datain memory cells of the specified ARRAY2 and ARRAY0 are transmittedthrough OR circuits and are outputted through their corresponding dataterminals I/O. If the write enable signal /WE is low in level during theperiod in which the output enable signal /OE is active (low in level),then a write signal input through the data terminal I/O issimultaneously written into each of the memory cells of the specifiedARRAY2 and ARRAY0.

FIGS. 13(A), 13(B) and 13(C) are respectively configurational viewsschematically illustrating the operations of the dynamic RAM accordingto the present invention. FIG. 13(A) shows a normal access operation,FIG. 13(B) illustrates a data write operation at the time of a dualmemory cell operation, and FIG. 13(C) depicts a data read operation atthe time of the dual memory cell operation.

As shown in FIG. 13(A), input/output data terminals I/O0 through I/O7respectively have address spaces of 4096 (row addresses)×256 (columnaddresses) upon the normal read and write operations. The read or writeoperation is effected on them on a random basis.

As shown in FIG. 13(B), internal addresses AX11 and /AX11 areinvalidated (and are simultaneously brought to an active level) upon thewrite operation under the dual memory cell system. Therefore, theinput/output data terminals I/O0 through I/O7 respectively have, as twosurfaces, address spaces of 2048 (row addresses)×256 (column addresses).The same data is simultaneously written into both surfaces.

As illustrated in FIG. 13(C), internal addresses AX11 and /AX11 are madeineffective (and are simultaneously brought to an active level) in thesame manner as described above upon the read operation under the dualmemory cell system. Therefore, the input/output data terminals I/O0through I/O7 respectively have two surfaces each composed of 2048 (rowaddresses)×256 (column addresses). Data are simultaneously read fromboth surfaces. These read data, i.e., the respective two data set aspairs on the different surfaces are subjected to an OR operation,followed by being output through the data terminals I/O0 through I/O7.

FIG. 14 is a circuit diagram showing examples of X decoders and worddrivers employed in the dynamic RAM according to the present invention.When a timing signal /XDG is brought to a low level, an X decoder startsoperating. Namely, when each of MOSFET switches specified by predecodesignals AXj, AXk and AX0 through AX3 is turned on, an input node of aninverter circuit of the word driver is drawn into a selected state.

The input of a non-selected word driver remains at a precharge highlevel. A signal outputted from an inverter circuit supplied with theprecharge signal is brought to a low level, so that a feedback P channelMOSFET,provided between the input of the inverter circuit and a sourcevoltage,is turned on so as to bring the inverter circuit into a latchstate.

One of word lines selection timing signals X0 through X3 is renderedhigh in level. In four driver MOSFETs each brought into an on conditionin response to a high level of the output signal from the aforementionedinverter circuit, the high level of one of the timing signals X0 throughX3 is transmitted to one word line as a word line selection signal.Since chargeups are respectively made between the gates of the driverMOSFETs and channels according to the on condition referred to above atthis time, the driver MOSFETs are subjected to self-bootstrapping inaccordance with the high level of one of the timing signals X0 throughX3 so that the high level of the above timing signal is transmitted tothe corresponding word line as it is. One redundant X decoder isselected based on a signal AXR0 and a corresponding redundant word lineRWL is selected in synchronism with a timing signal XR associated withthe timing signals X0 through X3.

FIGS. 15(A) and 15(B) are respectively timing charts for explainingschematic functions of a data conversion circuit DSCR provided in thedynamic RAM according to the present invention. FIG. 15(A) shows a readoperation under which a usual (normal) word line has been selected. FIG.15(B) shows a write operation under which a usual (normal) word line hasbeen selected.

In memory cells connected to bit lines /BL and BL upon the readoperation shown in FIG. 15(A), input/output information differs fromeach of holding levels based on electric charges stored in capacitors Csof the memory cells. Namely, when the memory cells connected to the bitline BL are connected to the word lines WL (1+4N) and WL (2+4N) selectedas described above, the data conversion circuit DSCR outputs a readsignal therefrom as it is. When the memory cells connected to the bitline /BL are connected to the word lines WL (0+4N) and WL (3+4N), thedata conversion circuit DSCR inverts a read signal and outputs theinverted signal therefrom. Referring to FIG. 15(A), the data is invertedand outputted in the initial cycle as described above. In second andthird cycles, the data is output as it is. In a fourth cycle, the datais inverted and output.

When memory cells connected to a bit line BL are connected to selectedword lines WL (1+4N) and WL (2+4N) upon the write operation shown inFIG. 15(B) in correspondence to the aforementioned read operation, thedata conversion circuit DSCR writes a read signal as it is. When memorycells connected to a bit line /BL are connected to selected word linesWL (0+4N) and WL (3+4N), the data conversion circuit DSCR inverts a readsignal and writes it. Namely, as shown in FIG. 15(B), the data isinverted and written as described above in the initial cycle. In secondand third cycles, the data is written as it is and the data is invertedand written in a fourth cycle.

FIGS. 16(A) and 16(B) are respectively timing charts for describingschematic functions of a data conversion circuit DSCR at the time thatredundant word lines employed in the dynamic RAM according to thepresent invention have been selected. FIG. 16(A) shows a read operationunder which each redundant word line has been selected. FIG. 16(B)illustrates a write operation under which each redundant word line hasbeen selected.

In memory cells connected to bit lines /BL and BL in the same manner asdescribed above upon the read operation shown in FIG. 16(A),input/output information differs from each of holding levels based onelectric charges stored in capacitors Cs of the memory cells. Namely,when the memory cells connected to the bit line BL are connected toredundant word lines RWL1 and RWL2 associated with the word lines WL(1+4N) and WL (2+4N), which are selected in accordance with RX1 and RX2as described above, the data conversion circuit DSCR outputs a readsignal as it is. When the memory cells connected to the bit line /BL areconnected to redundant word lines RWL0 and RWL3 selected in accordancewith RX0 and RX3, which are associated with the word lines WL (0+4N) andWL (3+4N), the data conversion circuit DSCR inverts a read signal andoutputs it therefrom. Referring to FIG. 16(A), the data is inverted andoutputted in the initial cycle as described above. In the second andthird cycles, the data is outputted as it is. Further, the data isinverted and outputted in a fourth cycle.

When memory cells connected to a bit line BL are connected to selectedredundant word lines RWL1 and RWL2 associated with the word lines WL(1+4N) and WL (2+4N) upon the write operation shown in FIG. 16(B) incorrespondence to the aforementioned read operation, the data conversioncircuit DSCR writes a read signal as it is. When memory cells connectedto a bit line /BL are connected to selected redundant word lines RWL0and RWL3 associated with the word lines WL (0+4N) and WL (3+4N), thedata conversion circuit DSCR inverts a read signal and writes it.Namely, as shown in FIG. 16(B), the data is inverted and written,asdescribed above,in the initial cycle. In second and third cycles, thedata is written as it is and the data is inverted and written in afourth cycle.

Thus, the same data is written into the two memory cells as shown inFIG. 13(B) thereby to execute a refresh operation in a refresh period orcycle set to a relatively long period corresponding to the average dataholding time of each memory cell by the aforementionedtemperature-dependent timer. Owing to the existence of memory cellswhich are likely to fall behind as described above, the memory cells inwhich the electric charges have been stored in the capacitors Cs losetheir electric charges if the data holding time is less than the refreshcycle. However, if even one of the two memory cells holds the state ofexistence of the electric charge,since the OR of the data in the twomemory cells is output upon reading, then no problem occurs because theone provides an output. Namely, since the probability that the twomemory cells will be memory cells that are likely to be left behind canbe regarded as nil, no problem arises even if the refresh cycle is setby the aforementioned average data holding time of each memory cell.

The setting of the refresh cycle to the aforementioned low power refreshperiod or cycle in a data holding state under battery backup, forexample, at the time that a system such as a microcomputer or the likeis cut off from the supply of power, makes it possible to greatly reducepower consumption. In other words, a significant difference of a figureor more exists between the data holding time of each memory cell that islikely to be left behind and the average data holding time of eachmemory cell. That is, a substantial time difference of the figure ormore is provided between the period for the normal refresh operationbased on the signal φSELF and the low power refresh period based on thesignal φLSELF.

In the present embodiment, the use of the temperature-dependent timercircuit shown in FIG. 10 makes it possible to automatically fit therefresh cycle to the average data holding time of each memory cell inthe dynamic RAM equipped with the temperature-dependent timer and setthe refresh cycle while following a change in temperature about eachmemory cell and a change in source voltage.

FIGS. 17(A) and 17(B) respectively show modifications of the dynamic RAMaccording to the present invention. When the dynamic RAM enters into thedata holding state as described above, the dynamic RAM invalidates anaddress AX11 owing to the setting of the operation mode referred toabove and simply selects two-surface address spaces simultaneously.Therefore, when effective data exist over the two surfaces, it isnecessary to temporarily read out the data by a microprocessor or thelike, compress it to 1/2 and effect the aforementioned write operationin this condition. When the dynamic RAM is returned to a memory accessstate from the data holding state, it is necessary to read out thecompressed data by the microprocessor or the like, expand the data andreturn it to the address spaces extending to the two surfaces so as tobe written therein.

In the present embodiment, the dynamic RAM itself has the aforementionedtwo functions of compressing and expanding the data. FIG. 17(A) shows anactual-time compressing process type dynamic RAM. Input data iscompressed through a data compression circuit and stored in the dynamicRAM in a dual memory cell system. The ORing of signals read from the twomemory cells,as described above,is output as read data and is restoredto the original data by a data expansion circuit and outputtedtherefrom. In this case, the dynamic RAM is always activated inaccordance with the aforementioned dual memory cell system. Therefore, arefresh operation is also set to a relatively long period or cycleaccording to or in unison with the average data holding time of eachmemory cell by the temperature-dependent timer circuit.

FIG. 20 is a characteristic diagram for describing the relationshipbetween a leaving or stand time and the rate of disappearance of databoth employed in a standard conventional dynamic RAM. Since theprobability that data will be held for an arbitrary time before itleaves a single arbitrary memory cell in the dynamic RAM is equivalentto the rate of data disappearance in the same drawing, it isstatistically apparent that the probability that data will disappearunder a dual memory cell system,in which two memory cells similar to theabove are connected to each other, is equal to the square of the aboveprobability in the case of the single memory cell. A dual memory cellmode shown in the same drawing is of a characteristic diagramstatistically obtained based on the data disappearance rate of thestandard dynamic RAM.

FIGS. 21(A) and 21(B) are respectively characteristic diagrams ofrefresh operations dependent on temperatures, which have experimentallybeen obtained in the aforementioned dynamic RAM. FIG. 21(B) shows theworst time for a normal memory cell (single memory cell) and the timeduring which memory cells corresponding to 50% of the entire memorycells will disappear. In a normal single memory cell mode as shown inthe same drawing, the 50% disappearance time is different in temperaturedependence from the time necessary for the worst cells to disappear andhence the former is longer than the latter. FIG. 21(A) illustrates theworst time at the time of the operation of a dual memory cell mode andthe time during which memory cells equivalent to 50% of the entirememory cells will disappear.

Since the temperature-dependent timer used upon the self-refresh modehas temperature dependence substantially similar to the temperaturedependence in the 50% disappearance time, the period or cycle of theself-refresh timer is required to be set so as not to exceed a worstcase time under a low temperature. It is therefore necessary to make thecycle thereof shorter than a suitable timer cycle on the hightemperature side. Thus, the optimum power reduction cannot be achieved.Since, however, the 50% disappearance time is substantially equal intemperature dependence to the time necessary for the worst cells todisappear in the dual memory cell mode, the most suitable powerreduction can be made.

FIG. 22 is a general view of the operation of a dynamic RAM according tothe present invention, which is provided with a dual memory cell modeand which has been applied to a portable device (such as a portableinformation terminal or the like). When the system is in operation oruse, the dynamic RAM is used as a 8-Mbit (1M×8) memory, for example.Upon turning OFF a power or power source (or Immediately after itsturning OFF), data in the memory is compressed to 1/2 (may be compressedto 1/2 or less) in accordance with a specific algorithm and such data isbrought into a duplex form so as to be copied onto its correspondingmemory cell. Upon standby, the data is held by the self-refresh of theaforementioned temperature-dependent timer or the like in accordancewith the dual memory cell system.

Prior to the putting of the system into use since the turning ON of thepower source, the duplexed data is decompressed (subjected to a stateopposite to the compression). The following methods are known as datacompressing methods, which are generally known at present:

(1) RUN LENGTH method

(2) LZW method

(3) Arithmetic method

(4) DCT method

(5) Vector quantizing method

In an application system, the optimum one of these data compressingmethods is selected from one type or a plurality of types according tothe type of data. Whether or not data should be compressed is selectedfor each memory storage area, i.e., depending on a data area or systemprogram area. Incidentally, the function of compressing the data may beexecuted by a software-like process based on software by amicroprocessor installed in the system or by dedicated hardware.

FIG. 17(B) shows a self compression process type dynamic RAM, which hasa normal memory cell access mode and a dual memory cell access mode.That is, the dynamic RAM is externally subjected to a read/writeoperation as the normal memory cell access mode.

When the system falls into a data holding state such as a power cutoffor the like, the normal data referred to above is compressed by a datacompression circuit and written into the dynamic RAM in accordance witha dual memory cell system. Therefore, the refresh operation is also setto a relatively long period or cycle according to the average dataholding time of each memory cell by the aforementionedtemperature-dependent timer circuit in the data holding state.

Upon the initial operation under which a data processing operation isstarted after the supply of the power to the system, the data held inaccordance with the dual memory cell system is read and expanded by adata expansion circuit so as to be restored to the original state, afterwhich the data is stored in the dynamic RAM. Thereafter, the dynamic RAMis brought to the normal memory cell access mode, followed by subjectingthe same to the read/write operation by a microprocessor or the like.

The compressed data formed by the data compression circuit is writtenback to the dynamic RAM using even a space area of the dynamic RAM.

The data compression circuits and the data expansion circuits shown inFIGS. 17(A) and 17(B) may be respectively formed on semiconductor chipsdifferent from the dynamic RAM as input/output interface circuits ofdynamic RAMs as well as being mounted on the same chips together withthe dynamic RAM.

FIG. 18 is a configurational view illustrating one embodiment of amemory module according to the present invention. The memory moduleaccording to the present embodiment comprises a plurality of DRAM chipsand a control chip both mounted on a module board (mounted substrate).The control chip is composed of a data converter associated with theaforementioned data conversion circuit DSCR, an address comparator and aclock circuit as shown in an enlarged diagram of the control chip.Namely, a combination of the plurality of dynamic RAMs constructed asshown in FIGS. 1 and 2 and the control chip is configured as a memorymodule or memory system.

Each of the DRAM chips is composed of a standard dynamic RAM of aconventional address multi system. It is noted that each individual DRAMchip is handled as one associated with a part of each of the memoryarrays MARYO through MARY3 or the like shown in FIG. 1. The clockcircuit makes a mode decision in response to signals /RAS, /CAS, /WE and/OE and performs switching between address signals for a normal memorycell access operation and a dual memory cell access operation. Thus, onesemiconductor memory device of such a type that the standard DRAM chipis regarded as one of the aforementioned memory arrays, on the mountedsubstrate, and is formed in combination with the control chip thereby toperform an operation equal to the aforementioned embodiment.

FIG. 19 is a configurational view showing another embodiment of thememory module according to the present invention. The memory moduleaccording to the present embodiment is composed of an even number ofDRAM chips mounted on a module board (mounted substrate). The DRAMaccording to the present embodiment is configured as the aforementionedtwo-intersection bit line system. However, a data converter similar tothe above is incorporated in the DRAM. Further, a logic 1 (e.g., highlevel) of data written from an external terminal is associated with astate in which an electric charge exists in a capacitor of each memorycell, whereas a logic 0 (e.g., low level) of the written data isassociated with a state in which no electric charge exists in thecapacitor of each memory cell.

Since the written data may be read out from each DRAM chip as it is, itis unnecessary to set the logic 1 or 0 of the written signal inone-to-one correspondence with the state of existence or non-existenceof the charge in each memory cell. Therefore, each DRAM equipped withthe aforementioned data converter and each data converter-free DRAM canbe also utilized in the same manner as described above. However, twosets of input/output terminals IO0 through I/Oi of the two DRAMsrespectively having the data converters incorporated therein areconnected in parallel so as to correspond to one another and they aremounted on a single mounted substrate as memory modules. Although notrestricted in particular, wired OR logic is incorporated in an outputcircuit of each data converter referred to above using an open drainoutput circuit or the like.

Owing to the simple construction that output terminals of the two DRAMchips each capable of utilizing the aforementioned wired OR logic areelectrically connected to their corresponding data patterns or wires onthe mounted substrate as a pair, the normal stored data can be read fromthe other of the two DRAM chips even if the destruction of informationoccurs in memory cells of one of the DRAM chips due to the leak currentalthough only the storage capacity equal to one-half the entire storagecapacity of the DRAM chips provided on the mounted substrate isprovided. It is therefore possible to enhance reliability. Further,since the refresh cycle of each DRAM chip can be made longer than theconventional refresh cycle over about one figure or more, the low powerconsumption can be achieved.

When the aforementioned open drain output circuit is used, the unifieddata conversion operation may be carried out so that the electric chargeexists in the capacitor of each memory cell in correspondence with thelow level of the logic 0. A source follower output MOSFET can be used asthe output circuit capable of using the wired OR logic. In this case,the unified data conversion operation may be done so that the chargeexists in the capacitor of each memory cell in correspondence with thehigh level of the logic 1.

Operations and effects obtained from the aforementioned embodiments areas follows:

(1) A dynamic RAM having a plurality of memory arrays, wherein dynamicmemory cells each composed of an address selection MOSFET and aninformation storage capacitor respectively are provided at points ofintersection of complementary bit line pairs of folded-bit line type andword lines in matrix form, is provided with a circuit for performingdata conversion that the two dynamic memory cells respectively locatedin different memory arrays are simultaneously selected in accordancewith the designation of a specific write operation mode, a logic 1 of awrite signal is associated with a state in which an electric chargeexists in the corresponding capacitor and a logic 0 of the write signalis associated with a state in which no electric charge exists in eitherof the capacitors of the selected memory cells, thereby writing the samewrite signal, a circuit for performing data conversion that two dynamicmemory cells in the different memory arrays are simultaneously selectedin accordance with the designation of a specific read operation mode,and in response to the write operation, a state in which an electriccharge exists in a capacitor of each of the two dynamic memory cells,referred to above, is associated with a logic 1 of a read signal and astate in which no electric charge exists in either of the capacitors isassociated with a logic 0 of the read signal, and a circuit foroutputting a logic 1 level as the read signal under a condition in whicheither or both of the selected two memory cells have an electric chargestored therein indicative of a logic 1 write signal. Thus anadvantageous effect can be obtained that since the same data is storedin the two memory cells in a data holding state or the like under theprovision of such circuits, the data can be held with high reliabilityand a substantial reduction in power consumption can be achieved becausea refresh cycle can be made longer according to the average memory cell.

(2) In the specific write mode and read mode as described above, thestate in which the electric charge exists in each capacitor is definedas the logic 1 and the charge-free state is defined as the logic 0 by adata conversion circuit. Further, the above data are read out inresponse to the write and read operations by the data conversion circuitand a signal indicative of the OR of the read signals produced from theabove two memory cells is outputted by the data conversion circuit.Thus, an advantageous effect can be obtained that since a leakagecurrent brings the charge-existing state into the charge-free state, theproper stored information can be taken out from the other of the twomemory cells even if the charge stored in one of the two memory cells isdestroyed due to the leakage current, thereby making it possible for thememory to hold the data with high reliability.

(3) The specific write operation mode is performed immediately beforethe execution of a self-refresh mode relative to the dynamic memorycells and the specific read operation mode is carried out immediatelyafter completion of the self-refresh mode. Further, a self-refresh cycleor period in the self-refresh mode is set up in accordance with eachmemory cell having the average information holding time. Itis,therefore, possible to bring about an advantageous effect that powerconsumption can be greatly reduced.

(4) An advantageous effect can be obtained that the aforementionedself-refresh cycle can be associated with temperature- andsource-dependencies of each dynamic memory cell by setting theself-refresh cycle with a timer circuit which is provided with a storageor accumulation capacitor simulating each dynamic memory cell, aprecharge circuit provided for the accumulation capacitor and a voltagedetecting circuit for detecting a potential of the accumulationcapacitor, and a refresh cycle associated with each memory cell havingthe average data holding time can be established.

(5) Owing to the provision of the function of simultaneously selectingtwo memory cells at different addresses in accordance with thedesignation of a specific write operation mode and simultaneouslywriting data whose number of data bits is compressed to half or less,the function of simultaneously selecting two memory cells at thedifferent addresses in accordance with the designation of a specificread operation mode, expanding a signal corresponding to the substantialOR of data signals read from the memory cells so as to restore it to theoriginal number of bits and reading it, and the function of writing orreading the data composed of the number of data bits referred to aboveas it is in a normal operation mode, an advantageous effect can beobtained that while the storage capacity under real use is beingincreased, the data can be held with high reliability and powerconsumption can be greatly reduced.

(6) A plurality of dynamic RAMs each having a plurality of memory arraysin each of which dynamic memory cells each composed of an addressselection MOSFET and an information storage capacitor are respectivelyprovided at points of intersection of complementary bit line pairs offolded-bit line type and word lines in matrix form; and a control chipcomprising a data conversion circuit for performing data conversion forvalidating memory cells in the two dynamic RAMs upon asimultaneously-selecting specific write operation, associating a logic 1of a write signal with a state in which an electric charge exists ineach capacitor referred to above and associating a logic 0 of the writesignal with a state in which no electric charge exists in each capacitorand for performing data conversion for validating the memory cells inthe two dynamic RAMs upon a simultaneously-selecting specific readoperation, allowing the state of existence of the charge in thecapacitor in each dynamic memory cell referred to above to correspond toa logic 1 of a read signal and allowing the charge-free state of eachcapacitor to correspond to a logic 0 of the read signal, and a logicalOR circuit for outputting a signal corresponding to the OR of thedata-converted two read signals produced from the two different dynamicRAMs as a read signal, are provided on a single mounted substrate toconfigure a memory system. Owing to such a construction,. the data canbe held with high reliability and a refresh period or cycle can be madelong in agreement with the average memory cell, thereby making itpossible to bring about an advantageous effect that a memory systemcapable of providing a substantial reduction in power consumption can beimplemented.

(7) An even number of semiconductor memory devices each comprisingmemory arrays wherein dynamic memory cells each composed of an addressselection MOSFET and an information storage capacitor are respectivelyprovided at points of intersection of individual pairs of complementarybit lines and word lines in matrix form and a data conversion circuitfor performing data conversion such that in a write operation mode, awrite signal having one level brings the information storage capacitorin each memory cell referred to above into a charge-existing state andbrings the information storage capacitor into a charge-free state andperforming data conversion associated with the write mode in a readmode, are provided on a single mounted substrate. The same data iswritten into the semiconductor memory devices of these semiconductormemory devices, which are provided two by two, and logical OR signalsare output from the two semiconductor memory device pairs. As a result,an advantageous effect can be brought about that since the data can beheld with high reliability and a refresh cycle can be made long inagreement with the average memory cell, a memory system capable ofproviding a substantial reduction in power consumption can be achieved.

Thus, the invention, which has been completed by the present inventors,has been described in detail in conjunction with the exemplifiedembodiments. However, the invention of the present application is notnecessarily limited to the aforementioned embodiments. It is needless tosay that many changes and modifications can be made thereto withoutdeparting from the spirit or scope of the invention as set forth herein.For example, configurations of memory arrays and configurations of theirperipheral circuits can take various forms including that shown in thedisclosed embodiments. When complementary bit lines are allowed tointersect at their intermediate portion, it is necessary to reverse theaforementioned data conversion at the portion of their intersection.Therefore, an address signal specified to such an intersecting portionmay be utilized.

Advantageous effects obtained by typical ones of the invention disclosedin the present application will be briefly described as follows:

A dynamic RAM having a plurality of memory arrays, wherein dynamicmemory cells each composed of an address selection MOSFET and aninformation storage capacitor respectively are provided at points ofintersection of complementary bit line pairs of folded-bit line type andword lines in matrix form, is provided with a circuit for performingdata conversion such that the two dynamic memory cells in respectivelydifferent memory arrays are simultaneously selected in accordance withthe designation of a specific write operation mode, a logic 1 of a writesignal is associated with a state in which an electric charge exists inthe corresponding capacitor and a logic 0 of the write signal isassociated with a state in which no electric charge exists in thecapacitor, thereby writing the same write signal, a circuit forperforming data conversion that two dynamic memory cells in thedifferent memory arrays are simultaneously selected in accordance withthe designation of a specific read operation mode, and in response tothe write operation, a state in which an electric charge exists in acapacitor of each of the two dynamic memory cells referred to above, isassociated with a logic 1 of a read signal and a state in which noelectric charge exists in the capacitor, is associated with a logic 0 ofthe read signal, and a circuit for outputting a logic 1 level as theread signal under a condition in which either or both of the selectedtwo memory cells have an electric charge stored therein indicative of alogic 1 write signal. Thus, since the same data is stored in the twomemory cells in a data holding state or the like under the provision ofsuch circuits, the data can be held with high reliability and asubstantial reduction in power consumption can be achieved because arefresh cycle can be made longer according to the average memory cell.

In the specific write mode and read mode as described above, the statein which the electric charge exists in each capacitor is defined as thelogic 1 and the charge-free state is defined as the logic 0 by a dataconversion circuit. Further, the above data are read out in response tothe write and read operations by the data conversion circuit and asignal indicative of the OR of the read signals produced from the abovetwo memory cells is outputted by the data conversion circuits Thus,since a leakage current brings the charge-existing state into thecharge-free state, the proper stored information can be taken out fromthe other of the two memory cells even if the charge stored in one ofthe two memory cells is destroyed due to the leakage current, therebymaking it possible to hold the data with high reliability.

The specific write operation mode is done immediately before aself-refresh mode relative to the dynamic memory cells and the specificread operation mode is carried out immediately after completion of theself-refresh mode. Further, a refresh cycle or period in theself-refresh mode is set up in agreement with each memory cell havingthe average information holding time. It is therefore possible togreatly reduce power consumption.

By setting the self-refresh cycle with a timer circuit provided with astorage or accumulation capacitor formed by simulating each dynamicmemory cell, a precharge circuit provided so as correspond to theaccumulation capacitor and a voltage detecting circuit for detecting apotential of the accumulation capacitor, the self-refresh cycle can beassociated with temperature- and source-dependencies of each dynamicmemory cell and a refresh cycle associated with each memory cell havingthe average data holding time can be established.

Owing to the provision of the function of simultaneously selecting twomemory cells at different addresses in accordance with the designationof a specific write operation mode and simultaneously writing data whosenumber of data bits is compressed to half or less, the function ofsimultaneously selecting two memory cells at the different addresses inaccordance with the designation of a specific read operation mode,expanding a signal corresponding to the substantial OR of data signalsread from the memory cells so as to restore it to the original number ofbits and reading it, and the function of writing or reading the datacomposed of the number of data bits referred to above as it is in anormal operation mode, the data can be held with high reliability andpower consumption can be greatly reduced while the storage capacityunder real use is being increased.

A plurality of dynamic RAMs each having a plurality of memory arrays ineach of which dynamic memory cells each composed of an address selectionMOSFET and an information storage capacitor are respectively provided atpoints of intersection of complementary bit line pairs of folded-bitline type and word lines in matrix form; and a control chip comprising adata conversion circuit for performing data conversion for validatingmemory cells in the two dynamic RAMs upon a simultaneously-selectingspecific write operation, associating a logic 1 of a write signal with astate in which an electric charge exists in each capacitor referred toabove and associating a logic 0 of the write signal with a state inwhich no electric charge exists in each capacitor and for performingdata conversion for validating the memory cells in the two dynamic RAMsupon a simultaneously-selecting specific read operation, allowing thestate of existence of the charge in the capacitor in each dynamic memorycell referred to above to correspond to a logic 1 of a read signal andallowing the charge-free state of each capacitor to correspond to alogic 0 of the read signal, and a logical OR circuit for outputting asignal corresponding to the OR of the data-converted two read signalsproduced from the two different dynamic RAMs as a read signal, areprovided on a single mounted substrate to configure a memory system.Owing to such a construction, the data can be held with high reliabilityand a refresh period or cycle can be made long in agreement with theaverage memory cell, thereby making it possible to achieve a memorysystem capable of providing a substantial reduction in powerconsumption.

An even number of semiconductor memory devices each comprising memoryarrays wherein dynamic memory cells each composed of an addressselection MOSFET and an information storage capacitor are respectivelyprovided at points of intersection of individual pairs of complementarybit lines and word lines in matrix form and a data conversion circuitfor performing data conversion such that in a write operation mode, awrite signal having one level brings the information storage capacitorin each memory cell referred to above into a charge-existing state and awrite signal having the other level brings the information storagecapacitor into a charge-free state and performing data conversionassociated with the write mode in a read mode, are provided on a singlemounted substrate. The same data is written into the semiconductormemory devices of these semiconductor memory devices, which are providedtwo by two, and a logical OR signal is output from each pair of twosemiconductor memory devices. Thus, since the data can be held with highreliability and a refresh cycle can be made long in agreement with theaverage memory cell, a memory system capable of providing a substantialreduction in power consumption can be materialized.

What is claimed is:
 1. A memory system comprising:a plurality of dynamicRAMs each having a plurality of memory arrays in each of which dynamicmemory cells, each including an address selection MOSFET and aninformation storage capacitor coupled thereto, are respectively providedat points of intersection of complementary bit line pairs of folded-bitline type and word lines in matrix form; and a control chip including adata converter, which performs data conversion for validating memorycells in a pair of dynamic RAMs upon simultaneously-selecting a specificwrite operation, associating a logic 1 of a write signal with a state inwhich an electric charge exists in said each capacitor and associating alogic 0 of the write signal with a state in which no electric chargeexists in said each capacitor, which performs data conversion forvalidating the memory cells in the pair of dynamic RAMs uponsimultaneously-selecting a specific read operation, allowing the stateof existence of the charge in the capacitor in said each dynamic memorycell to correspond to a logic 1 of a read signal and allowing thecharge-free state of said each capacitor to correspond to a logic 0 ofthe read signal, and which outputs a signal corresponding to the OR ofthe data-converted two read signals produced from the two differentdynamic RAMs as a read signal, wherein said plurality of dynamic RAMsand said control chip are provided on a single mounted substrate.
 2. Amemory system according to claim 1, wherein said specific writeoperation is executed immediately before the execution of a self-refreshmode relative to said each dynamic RAM, said specific read operation isdone immediately after completion of the self-refresh mode and a refreshcycle in the self-refresh mode is set according to said each memory cellof said dynamic RAM, which has an average information holding time.
 3. Amemory system comprising:an even number of semiconductor memory devicesprovided on a single mounted substrate, each including:a plurality ofmemory arrays each having dynamic memory cells each including an addressselection MOSFET and an information storage capacitor coupled thereto,said memory cells being provided in matrix form at points ofintersection of each individual pair of complementary bit lines and wordlines; and a data conversion circuit which performs data conversion suchthat in a write operation mode, a write signal having one level bringsthe information storage capacitor in said each memory cell into acharge-existing state and a write signal having the other level bringsthe information storage capacitor into a charge-free state and whichperforms data conversion associated with said write operation mode in aread mode, whereby the same data is written into the semiconductormemory devices of said even number of semiconductor memory devices,which are provided two by two and a logical OR signal is output fromsaid each pair of two semiconductor memory devices.
 4. A memory systemaccording to claim 2, wherein said self-refresh cycle is set by a timercircuit, associated with each dynamic RAM, equipped with a storagecapacitor simulating each dynamic memory cell, a precharge circuitcoupled to the storage capacitor and a voltage detecting circuit fordetecting a potential of said storage capacitor.
 5. A memory systemaccording to claim 2, wherein said control circuit further includes aclock circuit which decides on an operation mode in accordance withcontrol signals applied thereto and performs switching between addresssignals for a normal memory cell access operation and a dual memory cellaccess operation.
 6. A memory system according to claim 5, wherein saidapplied control signals include a row address strobe (/RAS), a columnaddress strobe (/CAS), a write enable signal (/WE) and an output enablesignal (/OE).
 7. A memory system according to claim 1, wherein said dataconverter includes:a write data conversion circuit which is activated inaccordance with a designation of a specific write mode, said write dataconversion circuit being coupled to supply a source voltage to one bitline of a bit line pair in both of said pair of dynamic RAMs which iscoupled to the memory cell having the same address and to be writtenwith a write level corresponding to a write signal of a logic 1 andsupply a low level, corresponding to a circuit ground potential, to saidone bit line when a write level corresponding to a logic 0 istransferred to those same two memory cells; and a read data conversioncircuit which is activated in accordance with a designation of aspecific read mode, said read data conversion circuit setting a readsignal of a high level obtained from one of said two memory cells, uponselection of the word line coupled thereto, as a read signalcorresponding to a logic 1 and setting a read signal of a relatively lowlevel obtained from said one memory cell as a read signal correspondingto a logic 0 signal and said read data conversion circuit setting a readsignal of the high level obtained from the other one of said two memorycells, upon selection of the word line coupled thereto, as a read signalcorresponding to a logic 1 and setting a read signal of a low levelobtained from said other memory cell as a read signal corresponding to alogic
 0. 8. A memory system according to claim 7, wherein the specificwrite and read modes are designated in accordance with application of achip enable signal (/CE), an output enable signal (/OE) and a writeenable signal (/WE).
 9. A memory system according to claim 3, whereineach said data conversion circuit includes:a write data conversioncircuit which is activated in accordance with a designation of aspecific write mode, said write data conversion circuit being coupled tosupply a source voltage to a pair of bit lines of a pair of memoryarrays, respectively, which are coupled to a pair of memory cells havingthe same address and to be written with a write level corresponding to alogic 1 and supply a low level, corresponding to circuit groundpotential, to said pair of bit lines when a write level corresponding toa logic 0 is to be transferred to those same pair of memory cells; and aread data conversion circuit which is activated in accordance with adesignation of a specific read mode, said read data conversion circuitsetting a read signal of a high level obtained from one of said pair ofmemory cells, upon selection of the word line coupled thereto, as a readsignal corresponding to a logic 1 and setting a read signal of arelatively low level obtained from said one memory cell as a read signalcorresponding to a logic 0 signal and said read data conversion circuitsetting a read signal of the high level obtained from the other one ofsaid pair of memory cells, upon selection of the word line coupledthereto, as a read signal corresponding to a logic 1 and setting a readsignal of a low level obtained from said other memory cell as a readsignal corresponding to a logic
 0. 10. A memory system according toclaim 9, wherein the specific write and read modes are designated inaccordance with application of a chip enable signal (/CE), an outputenable signal (/OE) and a write enable signal (/WE).
 11. A memory systemcomprising:(i) a first chip comprising(a) a first word line, (b) asecond word line, (c) a first complementary data line pair having afirst data line and a second data line, (d) a first memory cell providedso as to correspond to a point of intersection of said first word lineand said first data line, (e) a second memory cell provided so as tocorrespond to a point of intersection of said second word line and saidsecond data line, and (f) a first sense amplifier connected to saidfirst data line and to said second data line; (ii) a second chipcomprising(a) a third word line, (b) a fourth word line, (c) a secondcomplementary data line pair having a third data line and a fourth dataline, (d) a third memory cell provided so as to correspond to a point ofintersection of said third word line and said third data line, (e) afourth memory cell provided so as to correspond to a point ofintersection of said fourth word line and said fourth data line, and (f)a second sense amplifier connected to said third data line and to saidfourth data line; and (iii) a circuit outputting a signal,wherein saidsignal is a first voltage when read data transferred from said firstmemory cell to said first data line is high in level and read datatransferred from said third memory cell to said third data line is highin level, wherein said signal is said first voltage when read datatransferred from said first memory cell to said first data line is highin level and read data transferred from said third memory cell to saidthird data line is low in level, wherein said signal is said firstvoltage when read data transferred from said first memory cell to saidfirst data line is low in level and read data transferred from saidthird memory cell to said third data line is high in level, and whereinsaid signal is a second voltage when read data transferred from saidfirst memory cell to said first data line is low in level and read datatransferred from said third memory cell to said third data line is lowin level.
 12. A memory system according to claim 11, wherein each ofsaid first, second, third and fourth memory cells is a dynamic memorycell.
 13. A memory system according to claim 11, wherein said circuit isincluded in a third chip.
 14. A memory system according to claim13,wherein said third chip further comprises external terminals, andwherein said circuit outputs said signal to one of said externalterminals.
 15. A memory system according to claim 11, wherein said firstvoltage is of a high level voltage and said second voltage is of a lowlevel voltage.
 16. A memory system according to claim 11,wherein saidfirst chip further comprises a first main amplifier, and wherein saidsecond chip further includes a second main amplifier.
 17. A memorysystem according to claim 11,wherein said signal is said first voltagewhen read data transferred from said second memory cell to said seconddata line is high in level and read data transferred from said fourthmemory cell to said fourth data line is high in level, wherein saidsignal is said first voltage when read data transferred from said secondmemory cell to said second data line is high in level and read datatransferred from said fourth memory cell to said fourth data line is lowin level, wherein said read signal is said first voltage when read datatransferred from said second memory cell to said second data line is lowin level and read data transferred from said fourth memory cell to saidfourth data line is high in level, and wherein said read signal is saidsecond voltage when read data transferred from said second memory cellto said second data line is low in level and read data transferred fromsaid fourth memory cell to said fourth data line is low in level.
 18. Amemory system according to claim 17, wherein said first voltage is ahigh level voltage and said second voltage is a low level voltage.
 19. Amemory system according to claim 11,wherein said first word line andsaid third word line are simultaneously brought to a selection level,and wherein said second word line and said fourth word line aresimultaneously brought to a selection level.
 20. A memory systemaccording to claim 11, wherein a same address is assigned to said firstand third word lines and a same address is assigned to said second andfourth word lines.
 21. A memory system comprising:a first chipcomprising a plurality of first memory cells; a second chip comprising aplurality of second memory cells; and a third chip comprising a circuitconnected to said first chip and to said second chip so as to output asignal therefrom, wherein said signal is a first voltage when datastored in a respective first memory cell is high in level and datastored in a respective second memory cell is high in level in a case inwhich both said first memory cell and said second memory cell areselected for reading out, wherein said signal is a first voltage whendata stored in said first memory cell is high in level and data storedin said second memory cell is low in level in a case in which both saidfirst memory cell and said second memory cell are selected for readingout, wherein said signal is a first voltage when data stored in saidfirst memory cell is low in level and data stored in said second memorycell is high in level in a case in which both said first memory cell andsaid second memory cell are selected for reading out, and wherein saidsignal is a second voltage when data stored in said first memory cell islow in level and data stored in said second memory cell is low in levelin a case in which both said first memory cell and said second memorycell are selected for reading out.
 22. A memory system according toclaim 21, wherein each of said plurality of first memory cells and eachof said plurality of second memory cells comprises a transistor and acapacitor connected to said transistor.
 23. A memory system according toclaim 21, wherein said first voltage is of a high level voltage and saidsecond voltage is of a low level voltage.
 24. A memory system accordingto claim 21, further comprising:a first sense amplifier connected tosaid first memory cells; and a second sense amplifier connected to saidsecond memory cells.
 25. A memory system according to claim 21, furthercomprising:a first amplifier which senses whether the selected memorycell in said first chip stores data of high level or low level; and asecond amplifier which senses whether the selected memory cell in saidsecond chip stores data of high level or low level.
 26. A memory systemaccording to claim 21, further comprising a first amplifier and a secondamplifier,wherein each of said plurality of first memory cells and eachof said plurality of second memory cells comprises a transistor and acapacitor connected to said transistor, wherein said first amplifierdetects whether the charge level of the capacitor in the selected one ofsaid first memory cells is larger than a predetermined level or not, andwherein said second amplifier detects whether the charge level of thecapacitor in the selected one of said second memory cells is larger thana predetermined level or not.
 27. A memory system comprising:a firstmemory array comprising a plurality of first memory cells; a secondmemory array comprising a plurality of second memory cells; and acircuit connected to said first memory array and to said second memoryarray so as to output a signal therefrom, wherein said signal is a firstvoltage when data stored in a respective first memory cell is high inlevel and data stored in a respective second memory cell is high inlevel in a case in which both said first memory cell and said secondmemory cell are accessed for reading out, wherein said signal is a firstvoltage when data stored in said first memory cell is high in level anddata stored in said second memory cell is low in level in a case inwhich both said first memory cell and said second memory cell areaccessed for reading out, wherein said signal is a first voltage whendata stored in said first memory cell is low in level and data stored insaid second memory cell is high in level in a case in which both saidfirst memory cell and said second memory cell are accessed for readingout, and wherein said signal is a second voltage when data stored insaid first memory cell is low in level and data stored in said secondmemory cell is low in level in a case in which both said first memorycell and said second memory cell are accessed for reading out.
 28. Amemory system according to claim 27, wherein each of said plurality offirst memory cells and each of said plurality of second memory cellscomprises a transistor and a capacitor connected to said transistor. 29.A memory system according to claim 27,wherein said first memory array isincluded in a first chip, and wherein said second memory array isincluded in a second chip.
 30. A memory system according to claim27,wherein said first memory array is included in a first chip, whereinsaid second memory array is included in a second chip, and wherein saidcircuit is included in a third chip.
 31. A memory system according toclaim 27,wherein said first memory array and said circuit are includedin a first chip, and wherein said second memory array is included in asecond chip.
 32. A memory system according to claim 27, wherein saidfirst memory array and said second memory array are formed in differentsemiconductor substrates.
 33. A memory system according to claim 32,wherein each of said plurality of first memory cells and each of saidplurality of second memory cells comprises a transistor and a capacitorconnected to said transistor.
 34. A memory system according to claim 32,wherein each of said plurality of first memory cells and each of saidplurality of second memory cells comprises an address selection MOSFETand an information storage capacitor connected to said address selectionMOSFET.
 35. A memory system according to claim 27, wherein said firstmemory array and said second memory array are formed in a semiconductorsubstrate.
 36. A memory system according to claim 35, wherein each ofsaid plurality of first memory cells and each of said plurality ofsecond memory cells comprises a transistor and a capacitor connected tosaid transistor.
 37. A memory system according to claim 35, wherein eachof said plurality of first memory cells and each of said plurality ofsecond memory cells comprises an address selection MOSFET and aninformation storage capacitor connected to said address selectionMOSFET.
 38. A memory system according to claim 27, wherein said firstvoltage is of a high level voltage and said second voltage is of a lowlevel voltage.
 39. A memory system according to claim 27, furtherincluding:a first sense amplifier connected between said first memorycells and said circuit; and a second sense amplifier connected betweensaid second memory cells and said circuit.
 40. A memory system accordingto claim 27, further comprising:a first amplifier which senses whetherthe accessed memory cell in said first memory array stores data of highlevel or low level; and a second amplifier which senses whether theaccessed memory cell in said second memory array stores data of highlevel or low level.
 41. A memory system according to claim 27, furthercomprising:a first amplifier which detects the level of stored data inthe accessed memory cell of said first memory array; and a secondamplifier which detects the level of stored data in the accessed memorycell of said second memory array.
 42. A memory system according to claim27, further including a first amplifier and a second amplifier,whereineach of said plurality of first memory cells and each of said pluralityof second memory cells comprises a transistor and a capacitor connectedto said transistor, wherein said first amplifier detects whether thecharge level of the capacitor in the accessed memory cell of said firstmemory array is larger than a predetermined level or not, and whereinsaid second amplifier detects whether the charge level of the capacitorin the accessed memory cell of said second memory array is larger than apredetermined level or not.
 43. A memory system according to claim 27,wherein said first memory cell being accessed in said first memory arrayis assigned a same address location as said second memory cell beingaccessed in said second memory array.